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科研机构
半导体研究所 [8]
内容类型
会议论文 [8]
发表日期
2006 [1]
2001 [1]
2000 [3]
1999 [1]
1998 [2]
学科主题
半导体物理 [8]
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学科主题:半导体物理
内容类型:会议论文
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Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors
会议论文
2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004
Zeng, YX (Zeng, Yuxin)
;
Liu, W (Liu, Wei)
;
Yang, FH (Yang, Fuhua)
;
Xu, P (Xu, Ping)
;
Tan, PH (Tan, Pingheng)
;
Zheng, HZ (Zheng, Houzhi)
;
Zeng, YP (Zeng, Yiping)
;
Xing, YJ (Xing, Yingjie)
;
Yu, DP (Yu, Dapeng)
收藏
  |  
浏览/下载:98/31
  |  
提交时间:2010/03/29
InAs quantum dot
photoluminescence
modulation-doped
field effect transistor
MU-M
CAPPING LAYER
Observation of the resonant Raman behavior of individual single-walled carbon nanotubes
会议论文
25th international conference on the physics of semiconductors (icps25), osaka, japan, sep 17-22, 2000
作者:
Tan PH
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/10/29
ELECTRIC-ARC TECHNIQUE
LARGE-SCALE
SCATTERING
SPECTRA
STOKES
MODES
Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures
会议论文
26th international symposium on compound semiconducors, berlin, germany, aug 22-26, 1999
Wang H
;
Wang HL
;
Feng SL
;
Zhu HJ
;
Wang XD
;
Guo ZS
;
Ning D
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2010/11/15
ELECTRONIC-STRUCTURE
CARRIER RELAXATION
ENERGY-LEVELS
SPECTROSCOPY
Electronic characteristics of InAs self-assembled quantum dots
会议论文
9th international conference on modulated semiconductor structures (mss9), fukuoka, japan, jul 12-16, 1999
Wang HL
;
Feng SL
;
Zhu HJ
;
Ning D
;
Chen F
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/11/15
InAs/GaAs quantum dots
self-assembled structure
DLTS
PL
band offset
ENERGY-LEVELS
CARRIER RELAXATION
SPECTROSCOPY
Modulation magnesium-doping in AlGaN/GaN superlattices
会议论文
international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000
Liu XL
;
Yuan HR
;
Lu DC
;
Wang XH
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2010/10/29
Mg-doped
AlGaN/GaN superlattices
resistivity
hole concentration
POLARIZATION
First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)
会议论文
2nd international conference on radiation effects on semiconductor materials, detectors and devices, florence, italy, mar 04-06, 1998
Li Z
;
Dezilllie B
;
Eremin V
;
Li CJ
;
Verbitskaya E
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/11/15
strip detectors
silicon detectors
annealing
simulation
irradiation
N-EFF
JUNCTION DETECTORS
RADIATION-DAMAGE
MODELS
Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate
会议论文
24th ieee international symposium on compound semiconductors, san diego, california, sep 08-11, 1997
作者:
Jiang DS
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/11/15
SHALLOW DONORS
Observation of defects in GaN epilayers
会议论文
7th international conference on defect recognition and image processing in semiconductors (drip-vii), templin, germany, sep 07-10, 1997
Kang JY
;
Liu XL
;
Ogawa T
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2010/11/15
SCATTERING
SAPPHIRE
GROWTH
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