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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 学科主题：半导体物理    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy 会议论文 32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005 Niu, ZC; Zhang, SY; Ni, HQ; Wu, DH; He, ZH; Sun, Z; Han, Q; Wu, RG 收藏  |  浏览/下载：223/60  |  提交时间：2010/03/29 IMPROVED LUMINESCENCE EFFICIENCY  TEMPERATURE  PHOTOLUMINESCENCE  NITROGEN  ORIGIN  DIODES   Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots 会议论文 3rd asian conference on chemical vapor deposition, taipei, taiwan, nov 12-14, 2004 Kong LM; Cai JF; Wu ZY; Gong Z; Niu ZC; Feng ZC 收藏  |  浏览/下载：166/29  |  提交时间：2010/03/29 time-resolved photoluminescence   Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well 会议论文 asia-pacific optical and wireless communications conference (apoc 2003), wuhan, peoples r china, nov 04-06, 2003 Ying-Qiang X; Zhang W; Niu ZC; Wu RG; Wang QM 收藏  |  浏览/下载：16/1  |  提交时间：2010/10/29 GaNAs  SiO2 encapsulation  rapid-thermal-annealing  nitrogen reorganization  MOLECULAR-BEAM EPITAXY  OPTICAL-PROPERTIES  MU-M   Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 作者:  Jiang DS 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 molecular beam epitaxy  quantum wells  semiconducting IIIV materials  LUMINESCENCE  GAASN