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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 学科主题：半导体物理    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Improvement of the electrical property of semi-insulating InP by suppression of compensation defects 会议论文 17th international conference on indium phosphide and related materials, glasgow, scotland, may 08-12, 2005 Zhao, YW; Dong, ZY 收藏  |  浏览/下载：220/68  |  提交时间：2010/03/29 ENCAPSULATED CZOCHRALSKI INP  SEMICONDUCTOR COMPOUND-CRYSTALS  STIMULATED CURRENT SPECTROSCOPY  CURRENT TRANSIENT SPECTROSCOPY  DEEP-LEVEL DEFECTS  ANNEALING AMBIENT  POINT-DEFECTS  FE  PHOSPHIDE  DONORS   Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers 会议论文 1st international symposium on point defect and stoichiometry, sendai, japan, mar 20-22, 2003 Leung BH; Fong WK; Surya C; Lu LW; Ge WK 收藏  |  浏览/下载：22/0  |  提交时间：2010/10/29 GaN  low-frequency noise  deep levels  deep level transient Fourier spectroscopy  DEVICES   Characterization of GaSb substrate wafers for MOCVD III-V antimonides 会议论文 7th international conference on defect recognition and image processing in semiconductors (drip-vii), templin, germany, sep 07-10, 1997 Peng RW; Ding YQ; Xu CM; Wang XG 收藏  |  浏览/下载：8/0  |  提交时间：2010/11/15 VAPOR-PHASE EPITAXY  GROWTH   Observation of defects in GaN epilayers 会议论文 7th international conference on defect recognition and image processing in semiconductors (drip-vii), templin, germany, sep 07-10, 1997 Kang JY; Liu XL; Ogawa T 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 SCATTERING  SAPPHIRE  GROWTH