QQ客服 官方微博 反馈留言

浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体物理    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires 会议论文 2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004 Miao, ZH (Miao, Zhenhua); Gong, Z (Gong, Zheng); Fang, ZD (Fang, Zhidan); Niu, ZC (Niu, Zhichuan) 收藏  |  浏览/下载：82/21  |  提交时间：2010/03/29 atomic hydrogen  molecular beam epitaxy  step arrays  MOLECULAR-BEAM EPITAXY  ATOMIC-HYDROGEN  VICINAL SURFACE  QUANTUM DOTS  GROWTH  TEMPERATURE  IRRADIATION  MECHANISM  MBE   Anisotropic strain in (100) ZnSe epilayers grown on lattice mismatched substrates 会议论文 27th annual conference on the physics and chemistry of semiconductor interfaces (pcsi-27), salt lake city, utah, jan 16-20, 2000 Yang Z; Sou IK; Chen YH 收藏  |  浏览/下载：7/0  |  提交时间：2010/11/15 REFLECTANCE DIFFERENCE SPECTROSCOPY  ZNSE/GAAS INTERFACE  STATES  GAAS   Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials 会议论文 14th latin american symposiumm on solid state physics, oaxaca, mexico, jan 11-16, 1998 Zou LF; Acosta-Ortiz SE; Zou LX; Regalado LE; Sun DZ; Wang ZG 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15 STRAIN RELAXATION  HETEROSTRUCTURES   Characterization of GaSb substrate wafers for MOCVD III-V antimonides 会议论文 7th international conference on defect recognition and image processing in semiconductors (drip-vii), templin, germany, sep 07-10, 1997 Peng RW; Ding YQ; Xu CM; Wang XG 收藏  |  浏览/下载：8/0  |  提交时间：2010/11/15 VAPOR-PHASE EPITAXY  GROWTH   Observation of defects in GaN epilayers 会议论文 7th international conference on defect recognition and image processing in semiconductors (drip-vii), templin, germany, sep 07-10, 1997 Kang JY; Liu XL; Ogawa T 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 SCATTERING  SAPPHIRE  GROWTH   Heteroepitaxy of cubic GaN: influence of interface structure 会议论文 royal-microscopical-society conference on microscopy of semiconducting materials, oxford, england, apr 07-10, 1997 Trampert A; Brandt O; Yang H; Yang B; Ploog KH 收藏  |  浏览/下载：7/0  |  提交时间：2010/11/15 MOLECULAR-BEAM EPITAXY  GAN/GAAS(001)  GROWTH