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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体物理    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy 会议论文 32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005 Niu, ZC; Zhang, SY; Ni, HQ; Wu, DH; He, ZH; Sun, Z; Han, Q; Wu, RG 收藏  |  浏览/下载：223/60  |  提交时间：2010/03/29 IMPROVED LUMINESCENCE EFFICIENCY  TEMPERATURE  PHOTOLUMINESCENCE  NITROGEN  ORIGIN  DIODES   Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy 会议论文 3rd international conference on materials for advanced technologies/9th international conference on advanced materials, singapore, singapore, jul 03-08, 2005 Jiang, DS; Qu, YH; Ni, HQ; Wu, DH; Xu, YQ; Niu, ZC 收藏  |  浏览/下载：110/24  |  提交时间：2010/03/29 molecular beam epitaxy   High efficiency RFID UHF power converter 会议论文 ieee region 10 conference (tencon 2006), hong kong, peoples r china, nov 14-17, 2006 Zhou, SH (Zhou, Shenghua); Yang, ZC (Yang, Zhichao); Wu, NJ (Wu, Nanjian) 收藏  |  浏览/下载：101/24  |  提交时间：2010/03/29 Si-based optoelectronic devices and their attractive applications 会议论文 1st czech-chinese workshop on advanced materials for optoelectronics (amfo 98), prague, czech republic, jun 15-17, 1998 Wang QM; Yang QQ; Zhu YQ; Si JJ; Liu YL; Lei HB; Cheng BW; Yu JZ 收藏  |  浏览/下载：9/0  |  提交时间：2010/11/15 1.3 mu m InGaAsP/InP strained layer multi-quantum-well complex-coupled distributed feedback laser 会议论文 semiconductor lasers iii, beijing, peoples r china, sep 16-18, 1998 Chen B; Wang W; Wang XJ; Zhang JY; Zhu HL; Zhou F 收藏  |  浏览/下载：18/0  |  提交时间：2010/10/29 1.3 mu m  complex-coupled grating  DFB laser   Growth and fabrication of high performance 980nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs 会议论文 semiconductor lasers iii, beijing, peoples r china, sep 16-18, 1998 Yang GW; Xu ZT; Xu JY; Ma XY; Zhang JM; Chen LH 收藏  |  浏览/下载：8/0  |  提交时间：2010/10/29 strained quantum well  semiconductor lasers