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CORC

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Dislocation core effect scattering in a quasitriangle potential well 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 11, 页码: art. no. 112102
作者:  Wei HY
收藏  |  浏览/下载：236/104  |  提交时间：2010/03/08
Microstructure of the silicon film prepared near the phase transition regime from amorphous to nanocrystalline 会议论文
symposium on quantum confined semiconductor nanostructures held at the 2002 mrs fall meeting, boston, ma, dec 02, 2001-dec 05, 2002
Zhang SB; Liao XB; Xu YY; Hu ZH; Zeng XB; Diao HW; Luo MC; Kong G
收藏  |  浏览/下载：18/0  |  提交时间：2010/10/29
Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer 期刊论文
journal of crystal growth, 2001, 卷号: 231, 期号: 4, 页码: 520-524
Cao X; Zeng YP; Kong MY; Pan LA; Wang BQ; Zhu ZP; Wang XG; Chang Y; Chu JH
收藏  |  浏览/下载：134/8  |  提交时间：2010/08/12
Carbonization process of Si(100) by ion-beam bombardment 期刊论文
journal of crystal growth, 2001, 卷号: 233, 期号: 3, 页码: 446-450
Liao MY; Chai CL; Yao ZY; Yang SY; Liu ZK; Wang ZG
收藏  |  浏览/下载：83/8  |  提交时间：2010/08/12
Experimental and numerical investigations on dissolution and recrystallization processes of GaSb/InSb/GaSb under microgravity and terrestrial conditions 期刊论文
journal of crystal growth, 2000, 卷号: 213, 期号: 1-2, 页码: 40-50
Hayakawa Y; Okano Y; Hirata A; Imaishi N; Kumagiri Y; Zhong X; Xie X; Yuan B; Wu F; Liu H; Yamaguchi T; Kumagawa M
收藏  |  浏览/下载：45/0  |  提交时间：2010/08/12
Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy 期刊论文
materials science and engineering b-solid state materials for advanced technology, 2000, 卷号: 72, 期号: 2-3, 页码: 189-192
作者:  Yu F
收藏  |  浏览/下载：46/0  |  提交时间：2010/08/12
Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy 会议论文
international conference on advanced materials: sympopsium m - silicon-based materials and devices, beijing, peoples r china, jun 13-18, 1999
作者:  Yu F
收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15
JFET SOS devices: Processing and gamma radiation effects 会议论文
5th international conference on solid-state and integrated circuit technology, beijing, peoples r china, oct 21-23, 1998
作者:  Yu F
收藏  |  浏览/下载：17/0  |  提交时间：2010/10/29
PHYSICAL VAPOR TRANSPORT AND CRYSTAL-GROWTH OF GESEXTE1-X SOLID-SOLUTIONS 期刊论文
zeitschrift fur anorganische und allgemeine chemie, 1991, 卷号: 598, 期号: 0, 页码: 339-352
WIEDEMEIER H; GE YR
收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15

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