×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
半导体研究所 [31]
内容类型
期刊论文 [25]
会议论文 [6]
发表日期
2010 [2]
2008 [2]
2007 [3]
2006 [4]
2005 [1]
2004 [1]
更多...
学科主题
半导体材料 [31]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共31条,第1-10条
帮助
限定条件
学科主题:半导体材料
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy
期刊论文
journal of crystal growth, 2010, 卷号: 312, 期号: 9, 页码: 1491-1495
Zhao J (Zhao Jie)
;
Zeng YP (Zeng Yiping)
;
Liu C (Liu Chao)
;
Li YB (Li Yanbo)
收藏
  |  
浏览/下载:148/33
  |  
提交时间:2010/06/04
Reflection high-energy electron diffraction
Atomic force microscopy
Molecular beam epitaxy
Zinc compounds
Semiconducting II-VI materials
Preparation and Optical Performance of Freestanding GaN Thick Films
期刊论文
rare metal materials and engineering, 2010, 卷号: 39, 期号: 12, 页码: 2169-2172
作者:
Wei TB
;
Yang JK
;
Duan RF
收藏
  |  
浏览/下载:58/10
  |  
提交时间:2011/07/05
GaN
HVPE
freestanding thick films
stress release
photoluminescence
VAPOR-PHASE EPITAXY
GROWTH
PRESSURE
HVPE
Effects of disk rotation rate on the growth of ZnO films by low-pressure metal-organic chemical vapor deposition
期刊论文
thin solid films, 2008, 卷号: 516, 期号: 6, 页码: 925-928
Zhang, PF
;
Wei, HY
;
Cong, GW
;
Hu, WG
;
Fan, HB
;
Wu, JJ
;
Zhu, QS
;
Liu, XL
收藏
  |  
浏览/下载:29/3
  |  
提交时间:2010/03/08
X-ray diffraction
metal-organic chemical vapor deposition
zinc oxide
structural properties
Influence of different interlayers on growth mode and properties of InN by MOVPE
期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 1, 页码: 238-241
Zhang, RQ
;
Liu, XL
;
Kang, TT
;
Hu, WG
;
Yang, SY
;
Jiao, CM
;
Zhu, QS
收藏
  |  
浏览/下载:51/3
  |  
提交时间:2010/03/08
DEFECT STRUCTURE
EPITAXIAL GAN
BAND-GAP
Characteristics of high Al content AlxGa1-xN grown by metalorganic chemical vapor deposition
期刊论文
microelectronics journal, 2007, 卷号: 38, 期号: 8-9, 页码: 838-841
Wang XY (Wang, Xiaoyan)
;
Wang XL (Wang, Xiaoliang)
;
Hu GX (Hu, Guoxin)
;
Wang BZ (Wang, Baozhu)
;
Ma ZY (Ma, Zhiyong)
;
Xiao HL (Xiao, Hongling)
;
Wang CM (Wang, Cuimei)
;
Ran JX (Ran, Junxue)
;
Li JP (Li, Jianping)
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2010/03/29
AlxGa1-xN
InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy
期刊论文
journal of crystal growth, 2007, 卷号: 304, 期号: 2, 页码: 472-475
Gao FB (Gao Fubao)
;
Chen NF (Chen NuoFu)
;
Liu L (Liu Lei)
;
Zhang XW (Zhang X. W.)
;
Wu JL (Wu Jinliang)
;
Yin ZG (Yin Zhigang)
收藏
  |  
浏览/下载:37/0
  |  
提交时间:2010/03/29
crystal structure
Spatial variation of optical and structural properties of ELO GaN directly grown on patterned sapphire by HVPE
期刊论文
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 9, 页码: 2881-2885
作者:
Wei TB
;
Duan RF
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2010/03/29
VAPOR-PHASE EPITAXY
Growth and characterization of semi-insulating GaN films grown by MOCVD
期刊论文
journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 14-18
Fang CB
;
Wang XL
;
Hu GX
;
Wang JX
;
Wang CM
;
Li JM
收藏
  |  
浏览/下载:49/0
  |  
提交时间:2010/04/11
MOCVD
GaN
resistivity
TSC
N-TYPE GAN
DOPED GAN
SPECTROSCOPY
CARBON
FE
Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition
会议论文
international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005
Sun, GS (Sun, Guosheng)
;
Ning, J (Ning, Jin)
;
Gong, QC (Gong, Quancheng)
;
Gao, X (Gao, Xin)
;
Wang, L (Wang, Lei)
;
Liu, XF (Liu, Xingfang)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
收藏
  |  
浏览/下载:100/29
  |  
提交时间:2010/03/29
homoepitaxial growth
low-pressure hot-wall CVD
structural and optical characteristics
intentional doping
Schottky barrier diodes
Comparison of space- and ground-grown Ce: Bi12SiO20 single crystals
期刊论文
microgravity science and technology, 2006, 卷号: 17, 期号: 1, 页码: 40244
Zhou YF
;
Pan ZL
;
Liu Y
;
Ai F
;
Chen NF
;
Huang YY
;
He W
;
Tang LA
;
Wang JC
收藏
  |  
浏览/下载:269/40
  |  
提交时间:2010/04/11
©版权所有 ©2017 CSpace - Powered by
CSpace