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Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs(001) substrate 期刊论文
semiconductor science and technology, 2003, 卷号: 18, 期号: 11, 页码: 955-959
作者:  Xu B
收藏  |  浏览/下载:73/0  |  提交时间:2010/08/12
Thermodynamics and kinetics analysis of in-situ synthesizing AlN 期刊论文
science in china series e-technological sciences, 2002, 卷号: 45, 期号: 3, 页码: 249-254
Zheng XH; Wang Q; Zhou ML; Li CG
收藏  |  浏览/下载:36/0  |  提交时间:2010/08/12
Low-temperature growth properties of Si1-xGex by disilane and solid-Ge molecular beam epitaxy 期刊论文
journal of crystal growth, 1998, 卷号: 193, 期号: 4, 页码: 535-540
Liu JP; Kong MY; Li JP; Liu XF; Huang DD; Sun DZ
收藏  |  浏览/下载:33/0  |  提交时间:2010/08/12


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