CORC

浏览/检索结果: 共7条,第1-7条 帮助

限定条件    
已选(0)清除 条数/页:   排序方式:
Enhancing rectification of Nb:SrTiO3/ZnO heterojunctions by magnetic field 期刊论文
Vacuum, 2017, 卷号: 142, 页码: 66-71
作者:  Ming Han;  Yong Ren;  Jiachen Li;  Yonghai Chen;  Weifeng Zhang
收藏  |  浏览/下载:16/0  |  提交时间:2018/05/23
Epitaxial growth of BaTiO3/ZnO heterojunctions and transition from rectification to bipolar resistive switching effect 期刊论文
Appl. Phys. Lett., 2017, 卷号: 111, 页码: 113506
作者:  Caihong Jia;  Xiaoqian Yin;  Guang Yang;  Yonghui Wu;  Jiachen Li
收藏  |  浏览/下载:24/0  |  提交时间:2018/05/23
Enhanced rectification, transport property and photocurrent generation of multilayer ReSe2/MoS2p–n heterojunctions 期刊论文
Nano Research, 2016, 卷号: 9, 期号: 2, 页码: 507-516
Xiaoting Wang; Le Huang; Yuting Peng; Nengjie Huo; Kedi Wu; Congxin Xia; Zhongming Wei; Sefaattin Tongay; Jingbo Li
收藏  |  浏览/下载:29/0  |  提交时间:2017/03/10
Ratchet effect induced by linearly polarized near- and mid-infrared radiation in InAs nanowires patterned quasi two-dimensional electron system 期刊论文
applied physics letters, 2011, 卷号: 99, 期号: 3, 页码: 32106
Jiang CY; Ma H; Yu JL; Liu Y; Chen YH
收藏  |  浏览/下载:15/0  |  提交时间:2012/02/06
Homoepitaxial Growth of 4H-SiC and Ti/4H-SiC SBDs 期刊论文
人工晶体学报, 2005, 卷号: 34, 期号: 6, 页码: 1006-1010
作者:  NING Jin;  LIU Xingfang
收藏  |  浏览/下载:10/0  |  提交时间:2010/11/23
High Temperature Characteristics of 3C-SiC/Si Heterojunction Diodes Grown by LPCVD 期刊论文
半导体学报, 2004, 卷号: 25, 期号: 9, 页码: 1091-1096
Zhang Yongxing; Sun Guosheng; Wang Lei; Zhao Wanshun; Gao Xin; Zeng Yiping; Li Jinmin; Li Siyuan
收藏  |  浏览/下载:11/0  |  提交时间:2010/11/23
Studies of 6H-SiC devices 期刊论文
current applied physics, 2002, 卷号: 2, 期号: 5, 页码: 393-399
Wang SR; Liu ZL
收藏  |  浏览/下载:57/0  |  提交时间:2010/08/12


©版权所有 ©2017 CSpace - Powered by CSpace