CORC

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CORC

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Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 2, 页码: article no.23716
作者:  Yin ZG;  Zhang XW;  Tan HR;  Fan YM;  Zhang SG
收藏  |  浏览/下载：42/3  |  提交时间：2011/07/05
Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films 期刊论文
diamond and related materials, 2010, 卷号: 19, 期号: 11, 页码: 1371-1376
Ying J (Ying J.); Zhang XW (Zhang X. W.); Fan YM (Fan Y. M.); Tan HR (Tan H. R.); Yin ZG (Yin Z. G.)
收藏  |  浏览/下载：27/0  |  提交时间：2010/12/28
In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Sun, GS; Zhao, YM; Wang, L; Wang, L; Zhao, WS; Liu, XF; Ji, G; Zeng, YP
收藏  |  浏览/下载：42/0  |  提交时间：2010/03/09
Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection 会议论文
6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006
Liu, XF (Liu, X. F.); Sun, GS (Sun, G. S.); Zhao, YM (Zhao, Y. M.); Ning, J (Ning, J.); Li, JY (Li, J. Y.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Luo, MC (Luo, M. C.); Li, JM (Li, J. M.)
收藏  |  浏览/下载：103/26  |  提交时间：2010/03/29
Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文
international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005
Sun, GS (Sun, Guosheng); Ning, J (Ning, Jin); Gong, QC (Gong, Quancheng); Gao, X (Gao, Xin); Wang, L (Wang, Lei); Liu, XF (Liu, Xingfang); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin)
收藏  |  浏览/下载：101/29  |  提交时间：2010/03/29
Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces 会议论文
7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004
Sun, GS; Ning, J; Zhang, YX; Gao, X; Wang, L; Zhao, WS; Zeng, YP; Li, JM
收藏  |  浏览/下载：206/60  |  提交时间：2010/03/29
Electrical properties and electroluminescence of 4H-SiC p-n junction diodes 期刊论文
journal of rare earths, 2004, 卷号: 22 sp.iss.si, 期号: 0, 页码: 275-278
Sun, GS; Zhang, YX; Gao, X; Wang, L; Zhao, WS; Zeng, YP; Li, JM
收藏  |  浏览/下载：87/0  |  提交时间：2010/03/17
4H-SiC  
Preparation of 50mm 3C-SiC/Si(111) as Substrates Suited for Ⅲ-Nitrides 期刊论文
半导体学报, 2004, 卷号: 25, 期号: 10, 页码: 1205-1210
Sun Guosheng; Zhang Yongxing; Gao Xin; Wang Junxi; Wang Lei; Zhao Wanshun; Wang Xiaoliang; Zeng Yiping; Li Jinmin
收藏  |  浏览/下载：14/0  |  提交时间：2010/11/23
Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition 期刊论文
半导体学报, 2004, 卷号: 25, 期号: 12, 页码: 1549-1554
Sun Guosheng; Gao Xin; Zhang Yongxing; Wang Lei; Zhao Wanshun; Zeng Yiping; Li Jinmin
收藏  |  浏览/下载：16/0  |  提交时间：2010/11/23
In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD 期刊论文
silicon carbide and related materials 2001 pts 1 and 2 proceedings, 2002, 卷号: 389-3, 期号: 0, 页码: 339-342
Sun GS; Luo MC; Wang L; Zhu SR; Li JM; Zeng YP; Lin LY
收藏  |  浏览/下载：78/0  |  提交时间：2010/08/12

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