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| Enhancement of Exciton-Phonon Interaction in InGaN Quantum Wells Induced by Electron-Beam Irradiation 期刊论文 japanese journal of applied physics, 2009, 卷号: 48, 期号: 2, 页码: art. no. 021001 作者: Wei XC ; Duan RF ; Ding K![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:78/19  |  提交时间:2010/03/08
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| Growth-Parameter Spaces and Optical Properties of Cubic Boron Nitride Films on Si(001) 期刊论文 chinese physics letters, 2009, 卷号: 26, 期号: 5, 页码: art. no. 056801 作者: You JB ; Zhang XW ; Fan YM ; Tan HR![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:368/49  |  提交时间:2010/03/08
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| High quality microcrystalline Si films by hydrogen dilution profile 期刊论文 thin solid films, 2006, 卷号: 515, 期号: 2, 页码: 452-455 Gu JH (Gu Jinhua); Zhu MF (Zhu Meifang); Wang LJ (Wang Liujiu); Liu FZ (Liu Fengzhen); Zhou BQ (Zhou Bingqing); Ding K (Ding Kun); Li GH (Li Guohua)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:39/0  |  提交时间:2010/04/11
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| Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer 期刊论文 journal of the electrochemical society, 2006, 卷号: 153, 期号: 7, 页码: g703-g706 作者: Ye XL ; Xu B ; Jin P![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:90/0  |  提交时间:2010/04/11
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| Structural and photoluminescent properties of ternary Zn1-xCdxO crystal films grown on Si(111) substrates 期刊论文 journal of crystal growth, 2003, 卷号: 256, 期号: 1-2, 页码: 78-82 Ye ZZ; Ma DW; He JH; Huang JY; Zhao BH; Luo XD; Xu ZY
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:488/1  |  提交时间:2010/08/12
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| Structural characterization of cubic GaN grown on GaAs(001) substrates 期刊论文 chinese journal of electronics, 2001, 卷号: 10, 期号: 2, 页码: 219-222 Zheng XH; Qu B; Wang YT; Yang H; Liang JW; Han JY
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:93/4  |  提交时间:2010/08/12
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| X-ray double-crystal characterization of the strain relaxation in GaAs/GaNxAs1-x/GaAs(001) sandwiched structures 期刊论文 journal of crystal growth, 2000, 卷号: 217, 期号: 1-2, 页码: 26-32 Pan Z; Wang YT; Li LH; Zhang W; Lin YW; Zhou ZQ; Wu RH
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:49/0  |  提交时间:2010/08/12
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| Point defects in III-V compound semiconductors 期刊论文 defects and diffusion in semiconductors, 2000, 卷号: 183-1, 期号: 0, 页码: 85-93 Chen N
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:44/0  |  提交时间:2010/08/12
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| Triclinic deformation and anisotropic strain relaxation of an InAs film on a GaAs(001) substrate measured by a series of symmetric double crystal X-ray diffraction 期刊论文 journal of crystal growth, 1998, 卷号: 191, 期号: 4, 页码: 627-630 Wang HM; Zeng YP; Zhou HW; Kong MY
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:52/0  |  提交时间:2010/08/12
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| Properties of GaAs single crystals grown by molecular beam epitaxy at low temperatures 期刊论文 science in china series a-mathematics physics astronomy, 1997, 卷号: 40, 期号: 2, 页码: 214-218 Chen NF; He HJ; Wang YT; Lin LY
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:19/0  |  提交时间:2010/11/17
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