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科研机构
半导体研究所 [12]
内容类型
期刊论文 [10]
会议论文 [2]
发表日期
2011 [1]
2010 [2]
2009 [1]
2006 [2]
2005 [1]
2003 [2]
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半导体材料 [12]
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Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts
期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 4, 页码: article no.47105
Lu YJ
;
Lin ZJ
;
Zhang Y
;
Meng LG
;
Cao ZF
;
Luan CB
;
Chen H
;
Wang ZG
收藏
  |  
浏览/下载:58/2
  |  
提交时间:2011/07/05
AlGaN/GaN heterostructures
thermal stressing
polarization
self-consistently solving Schrodinger's and Poisson's equations
FIELD-EFFECT TRANSISTORS
POLARIZATION
STABILITY
CHARGE
GAN
Self-consistent analysis of AlSb/InAs high electron mobility transistor structures
期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: art. no. 044504
Li YB (Li Yanbo)
;
Zhang Y (Zhang Yang)
;
Zeng YP (Zeng Yiping)
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  |  
浏览/下载:213/46
  |  
提交时间:2010/10/11
INAS/ALSB QUANTUM-WELLS
LOW-POWER APPLICATIONS
HEMTS
MODULATION
HETEROSTRUCTURES
TECHNOLOGY
CHANNEL
VOLTAGE
MASS
Different growth mechanisms of bimodal In As/GaAs QDs
期刊论文
physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 308-311
作者:
Ye XL
;
Zhou XL
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  |  
浏览/下载:42/3
  |  
提交时间:2011/07/05
INAS QUANTUM DOTS
GAAS(001)
RELAXATION
TRANSITION
GAAS
A mini-staged multi-stacked quantum cascade laser for improved optical and thermal performance
期刊论文
semiconductor science and technology, 2009, 卷号: 24, 期号: 7, 页码: art. no. 075023
作者:
Li L
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  |  
浏览/下载:83/4
  |  
提交时间:2010/03/08
ROOM-TEMPERATURE
Self-consistent analysis of double-delta-doped InAlAs/InGaAs/InP HEMTs
期刊论文
chinese physics, 2006, 卷号: 15, 期号: 11, 页码: 2735-2741
Li DL (Li Dong-Lin)
;
Zeng YP (Zeng Yi-Ping)
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  |  
浏览/下载:31/0
  |  
提交时间:2010/04/11
two-dimensional electron gas
high electron mobility transistor
self-consistent calculation
InAlAs/InGaAs heterostructure
CHARGE CONTROL MODEL
ELECTRON-MOBILITY TRANSISTORS
PSEUDOMORPHIC INGAAS HEMT
FIELD-EFFECT TRANSISTOR
QUANTUM-WELL
ALGAAS/INGAAS PHEMTS
GATE RECESS
HIGH-SPEED
HETEROJUNCTION
CHANNEL
Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistors
期刊论文
acta physica sinica, 2006, 卷号: 55, 期号: 7, 页码: 3677-3682
Li DL (Li Dong-Lin)
;
Zeng YP (Zeng Yi-Ping)
收藏
  |  
浏览/下载:66/0
  |  
提交时间:2010/04/11
HEMT
heterojunction
two dimentional electron gas
self-consistent calculation
FIELD-EFFECT TRANSISTOR
TRANSPORT-PROPERTIES
QUANTUM-WELLS
HEMTS
FREQUENCY
DENSITY
Photoluminescence investigation of two-dimensional electron gas in an undoped AlxGa1-xN/GaN heterostructure
期刊论文
chinese physics letters, 2005, 卷号: 22, 期号: 8, 页码: 2096-2099
Han, XX
;
Wu, JJ
;
Li, JM
;
Cong, GW
;
Liu, XL
;
Zhu, QS
;
Wang, ZG
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  |  
浏览/下载:45/17
  |  
提交时间:2010/03/17
DISLOCATION SCATTERING
Influence of heated catalyzer on thermal distribution of substrate in HWCVD system
期刊论文
thin solid films, 2003, 卷号: 430, 期号: 1-2, 页码: 50-53
Zhang Q
;
Zhu M
;
Wang L
;
Liu E
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  |  
浏览/下载:35/0
  |  
提交时间:2010/08/12
catalyzer
hot-wire chemical vapor deposition
simulation
AMORPHOUS-SILICON
DEPOSITION
Influence of heated catalyzer on thermal distribution of substrate in HWCVD system
会议论文
2nd international conference on cat-cvd (hot-wire cvd) process, denver, colorado, sep 10-13, 2002
Zhang Q
;
Zhu M
;
Wang L
;
Liu E
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  |  
浏览/下载:11/0
  |  
提交时间:2010/11/15
AMORPHOUS-SILICON
DEPOSITION
Influence of strain on annealing effects of In(Ga)As quantum dots
期刊论文
journal of crystal growth, 2002, 卷号: 244, 期号: 2, 页码: 136-141
作者:
Xu B
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  |  
浏览/下载:45/0
  |  
提交时间:2010/08/12
low dimensional structures
strain
molecular beam epitaxy
quantum dots
ELECTRONIC-STRUCTURE
PHOTOLUMINESCENCE
INTERDIFFUSION
TRANSITIONS
SPECTRA
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