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科研机构
半导体研究所 [17]
内容类型
期刊论文 [11]
会议论文 [6]
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2013 [1]
2010 [2]
2009 [1]
2008 [1]
2006 [3]
2005 [2]
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半导体材料 [17]
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Two dimensional electron gas mobility limited by scattering of quantum dots with indium composition transition region in quantum wells
期刊论文
physica e: low-dimensional systems and nanostructures, 2013, 卷号: 52, 页码: 150–154
Liu, Changbo
;
Yang, Shaoyan
;
Shi, Kai
;
Liu, Guipeng
;
Zhang, Heng
;
Jin, Dongdong
;
Gu, Chengyan
;
Zhao, Guijuan
;
Sang, Ling
;
Liu, Xianglin
;
Zhu, Qinsheng
;
Wang, Zhanguo
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2014/03/18
Intersubband absorption energy shifts in 3-level system for asymmetric quantum well terahertz emitters
期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: art. no. 083112
Song YF (Song Yafeng)
;
Lu YW (Lu Yanwu)
;
Zhang BA (Zhang Biao)
;
Xu XQ (Xu Xiaoqing)
;
Wang J (Wang Jun)
;
Guo Y (Guo Yan)
;
Shi K (Shi Kai)
;
Li ZW (Li Zhiwei)
;
Liu XL (Liu Xianglin)
;
Yang SY (Yang Shaoyan)
;
Zhu QS (Zhu Qinsheng)
;
Wang ZG (Wang Zhanguo)
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2010/12/05
OPTICAL PHONON ENERGY
INVERSION-LAYERS
TRANSITIONS
RELAXATION
LASERS
STATES
Microphotoluminescence investigation of InAs quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure
期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073111
Ding Y (Ding Y.)
;
Fan WJ (Fan W. J.)
;
Ma BS (Ma B. S.)
;
Xu DW (Xu D. W.)
;
Yoon SF (Yoon S. F.)
;
Liang S (Liang S.)
;
Zhao LJ (Zhao L. J.)
;
Wasiak M (Wasiak M.)
;
Czyszanowski T (Czyszanowski T.)
;
Nakwaski W (Nakwaski W.)
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2010/11/14
VAPOR-PHASE EPITAXY
PHOTOVOLTAGE SPECTROSCOPY
PHOTOLUMINESCENCE
MODES
Influence of a tilted cavity on quantum-dot optoelectronic active devices
期刊论文
半导体学报, 2009, 卷号: 30, 期号: 9, 页码: 37-40
作者:
Xu Bo
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2010/11/23
Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy
会议论文
2nd ieee international nanoelectronics conference, shanghai, peoples r china, mar 24-27, 2008
Liang, LY
;
Ye, XL
;
Jin, P
;
Chen, YH
;
Wang, ZG
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2010/03/09
INDUCED REFRACTIVE-INDEX
GROWTH
LASERS
GAAS
Silicon thin films prepared in the transition region and their use in solar cells
期刊论文
solar energy materials and solar cells, 2006, 卷号: 90, 期号: 18-19, 页码: 3001-3008
Zhang S (Zhang S.)
;
Liao X (Liao X.)
;
Raniero L (Raniero L.)
;
Fortunato E (Fortunato E.)
;
Xu Y (Xu Y.)
;
Kong G (Kong G.)
;
Aguas H (Aguas H.)
;
Ferreira I (Ferreira I.)
;
Martins R (Martins R.)
收藏
  |  
浏览/下载:59/0
  |  
提交时间:2010/04/11
silicon
thin film
solar cell
HYDROGENATED AMORPHOUS-SILICON
SI
MICROSTRUCTURE
High-quality multiple quantum wells selectively grown with tapered masks by ultra-low-pressure MOCVD
期刊论文
optical materials, 2006, 卷号: 28, 期号: 8-9, 页码: 1037-1040
作者:
Pan JQ
收藏
  |  
浏览/下载:61/0
  |  
提交时间:2010/04/11
selective-area growth
ultra-low-pressure
metal-organic chemical vapor deposition
tapered mask
photoluminescence
BANDGAP ENERGY CONTROL
INTEGRATED DFB LASER
EPITAXY
Silicon thin films prepared in the transition region and their use in solar cells
会议论文
14th international photovoltaic science and engineering conference, bangkok, thailand, jan 27-feb 01, 2004
Zhang S
;
Liao X
;
Raniero L
;
Fortunato E
;
Xu Y
;
Kong G
;
Aguas H
;
Ferreira I
;
Martins R
收藏
  |  
浏览/下载:153/25
  |  
提交时间:2010/03/29
silicon
InAs/GaAs quantum-dot superluminescent diodes with 110 nm bandwidth
期刊论文
electronics letters, 2005, 卷号: 41, 期号: 25, 页码: 1400-1402
作者:
Jin P
收藏
  |  
浏览/下载:51/0
  |  
提交时间:2010/04/11
SPECTRUM
The structural and photoluminescence character of InAs quantum dots grown on a combined InAlAs and GaAs strained buffer
期刊论文
pricm 5: the fifth pacific rim international conference on advanced materials and processing, 2005, 卷号: pts 1-5, 期号: 475-479, 页码: 1791-1794
Shi, GX
;
Xu, B
;
Jin, P
;
Ye, XL
;
Cui, CX
;
Zhang, CL
;
Wu, J
;
Wang, ZG
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2010/03/17
quantum dots
strain buffer layer
InAs
photoluminescence
WELL
LASER
LAYER
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