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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cells 会议论文 21st international conference on amorphous and nanocrystalline semiconductors, lisbon, portugal, sep 04-09, 2005 Hu ZH (Hu Zhihua); Liao XB (Liao Xianbo); Diao HW (Diao Hongwei); Cai Y (Cai Yi); Zhang SB (Zhang Shibin); Fortunato E (Fortunato Elvira); Martins R (Martins Rodrigo) 收藏  |  浏览/下载：520/27  |  提交时间：2010/03/29 silicon   Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cells 期刊论文 journal of non-crystalline solids, 2006, 卷号: 352, 期号: 9-20, 页码: 1900-1903 Hu ZH (Hu Zhihua); Liao XB (Liao Xianbo); Diao HW (Diao Hongwei); Cai Y (Cai Yi); Zhang SB (Zhang Shibin); Fortunato E (Fortunato Elvira); Martins R (Martins Rodrigo) 收藏  |  浏览/下载：59/0  |  提交时间：2010/04/11 silicon  solar cells  photovoltaics  Raman scattering  MICROCRYSTALLINE SILICON  SI NANOCRYSTALS  VOLUME FRACTION  RAMAN  CRYSTALLINITY  FILMS   Polymorphous silicon nanowires synthesized by plasma-enhanced chemical vapor deposition 会议论文 symposium on quantum confined semiconductor nanostructures held at the 2002 mrs fall meeting, boston, ma, dec 02, 2001-dec 05, 2002 Zeng XB; Liao XB; Diao HW; Hu ZH; Xu YY; Zhang SB; Chen CY; Chen WD; Kong GL 收藏  |  浏览/下载：9/0  |  提交时间：2010/10/29 LASER-ABLATION  SEMICONDUCTOR NANOWIRES  GROWTH  MECHANISM  EVAPORATION  DIAMETER  WIRES   Silicon nanowires grown on a pre-annealed Si substrate 期刊论文 journal of crystal growth, 2003, 卷号: 247, 期号: 1-2, 页码: 13-16 Zeng XB; Xu YY; Zhang SB; Hu ZH; Diao HW; Wang YQ; Kong GL; Liao XB 收藏  |  浏览/下载：50/0  |  提交时间：2010/08/12 chemical vapor deposition processes  nanomaterials  semiconducting silicon  LASER-ABLATION  SEMICONDUCTOR NANOWIRES  MECHANISM  EVAPORATION  DIAMETER  WIRES   Impact of wide bandgap p-type nc-Si on the performance of a-Si solar cells 会议论文 international conference on material for advanced technologies, singapore, singapore, jul 01-06, 2001 Deng X; Wang W; Han S; Povolny H; Du W; Liao X; Xiang X 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 A novel line-order of InAs quantum dots on GaAs 期刊论文 journal of crystal growth, 2002, 卷号: 241, 期号: 1-2, 页码: 69-73 作者:  Li CM;  Xu B;  Jin P 收藏  |  浏览/下载：46/0  |  提交时间：2010/08/12 low dimensional structures  strain  molecular beam epitaxy  quantum dots  semiconducting III-V materials  SHAPE TRANSITION  PHOTOLUMINESCENCE  FABRICATION  DEPOSITION  WIRES  SITU   In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD 会议论文 international conference on silicon carbide and related materials, tsukuba, japan, oct 28-nov 02, 2001 Sun GS; Luo MC; Wang L; Zhu SR; Li JM; Zeng YP; Lin LY 收藏  |  浏览/下载：13/0  |  提交时间：2010/11/15 3C-SiC  in-situ doping  low-pressure CVD  sapphire substrate  CHEMICAL-VAPOR-DEPOSITION  COMPETITION EPITAXY