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CORC

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Selective Area Growth of GaAs in V-Grooved Trenches on Si(001) Substrates by Aspect-Ratio 期刊论文
chinese physics letters, 2015, 卷号: 32, 期号: 2, 页码: 028101
Li ShiYan; Zhou XuLiang; Kong XiangTing; Li MengKe; Mi JunPing; Bian Jing; Wang Wei; Pan JiaoQing
收藏  |  浏览/下载：25/0  |  提交时间：2016/03/23
Effect of hydrogen flow on growth of 3C-SiC heteroepitaxial layers on Si(111) substrates 期刊论文
applied surface science, 2015, 卷号: 353, 页码: 744-749
Guoguo Yan; Feng Zhang; Yingxi Niu; Fei Yang; Xingfang Liu; Lei Wang; Wanshun Zhao; Guosheng Sun; Yiping Zeng
收藏  |  浏览/下载：15/0  |  提交时间：2016/03/29
Nanoscale opening fabrication on Si (111) surface from SiO2 barrier for vertical growth of III-V nanowire arrays 期刊论文
nanotechnology, 2015, 卷号: 26, 期号: 26, 页码: 265302
Tuanwei Shi; Xiaoye Wang; Baojun Wang; Wei Wang; Xiaoguang Yang; Wenyuan Yang; Qing Chen; Hongqi Xu; Shengyong Xu; Tao Yang
收藏  |  浏览/下载：18/0  |  提交时间：2016/03/23
The Growth and Fabrication of InGaN_GaN Multi-Quantum Well Solar Cells on Si(111) Substrates 期刊论文
chinese physics letters, 2013, 卷号: 30, 期号: 6, 页码: 068402
LI Zhi-Dong, XIAO Hong-Ling, WANG Xiao-Liang, WANG Cui-Mei, DENG Qing-Wen, JING Liang, DING Jie-Qin, WANG Zhan-Guo, HOU Xun
收藏  |  浏览/下载：17/0  |  提交时间：2014/03/17
Surface saturation control on the formation of wurtzite polytypes in zinc blende SiC nanofilms grown on Si(100) substrates 期刊论文
chinese physics b, 2013, 卷号: 22, 期号: 8, 页码: 086802
Liu Xing-Fang, Sun Guo-Sheng, Liu Bin, Yan Guo-Guo, Guan Min, Zhang Yang, Zhang Feng, Dong Lin, Zheng Liu, Liu Sheng-Bei, Tian Li-Xin, Wang Lei, Zhao Wan-Shun, Zeng Yi-Ping
收藏  |  浏览/下载：17/0  |  提交时间：2014/03/18
The Growth of Semi-Polar ZnO (10(1)over-bar1) on Si (111) Substrates Using a Methanol Oxidant by Metalorganic Chemical Vapor Deposition 期刊论文
chinese physics letters, 2012, 卷号: 29, 期号: 1, 页码: 18101
Sang, L; Wang, J; Shi, K; Wei, HY; Jiao, CM; Liu, XL; Yang, SY; Zhu, QS; Wang, ZG
收藏  |  浏览/下载：11/0  |  提交时间：2013/03/17
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Pan X
收藏  |  浏览/下载：20/0  |  提交时间：2011/09/14
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 会议论文
16th international conference on crystal growth (iccg16)/14th international conference on vapor growth and epitaxy (icvge14), beijing, peoples r china, aug 08-13, 2010
Pan X (Pan Xu); Wei M (Wei Meng); Yang CB (Yang Cuibai); Xiao HL (Xiao Hongling); Wang CM (Wang Cuimei); Wang XL (Wang Xiaoliang)
收藏  |  浏览/下载：15/0  |  提交时间：2011/07/26
Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(111) Substrate 会议论文
3rd international photonics and optoelectronics meetings, wuhan, peoples r china, nov 02-05, 2010
Wei M (Wei Meng); Wang XL (Wang Xiaoliang); Pan X (Pan Xu); Xiao HL (Xiao Hongling); Wang CM (Wang Cuimei); Zhang ML (Zhang Minglan); Wang ZG (Wang Zhanguo)
收藏  |  浏览/下载：12/0  |  提交时间：2011/07/26
Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1) 期刊论文
materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 97-100
Wei, M; Wang, XL; Pan, X; Xiao, HL; Wang, CM; Hou, QF; Wang, ZG
收藏  |  浏览/下载：26/0  |  提交时间：2012/01/06

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