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Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers 期刊论文
scientific reports, 2016, 卷号: 6, 页码: 20787
Guijuan Zhao; Lianshan Wang; Shaoyan Yang; Huijie Li; Hongyuan Wei; Dongyue Han; Zhanguo Wang
收藏  |  浏览/下载：26/0  |  提交时间：2017/03/10
Epitaxial growth of non-polar m-plane AIN film on bare and ZnO buffered m-sapphire 期刊论文
journal of crystal growth, 2014, 卷号: 391, 页码: 111-115
Wang, HT; Jia, CH; Xu, JK; Chen, YH; Chen, XW; Zhang, WF
收藏  |  浏览/下载：15/0  |  提交时间：2015/04/02
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145
作者:  Duan RF
收藏  |  浏览/下载：80/4  |  提交时间：2011/07/05
The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 39-42
作者:  Song HP;  Shi K;  Sang L;  Wei HY
收藏  |  浏览/下载：58/3  |  提交时间：2011/07/05
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO(2)(100) by metal organic chemical vapour deposition 期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: 245402
Fu D; Zhang R; Liu B; Xie ZL; Xiu XQ; Gu SL; Lu H; Zheng YD; Chen YH; Wang ZG
收藏  |  浏览/下载：13/0  |  提交时间：2012/02/06
Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films 期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 15, 页码: art. no. 151904
作者:  Jin P;  Wei HY;  Song HP
收藏  |  浏览/下载：185/32  |  提交时间：2010/05/04
Microphotoluminescence investigation of InAs quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073111
Ding Y (Ding Y.); Fan WJ (Fan W. J.); Ma BS (Ma B. S.); Xu DW (Xu D. W.); Yoon SF (Yoon S. F.); Liang S (Liang S.); Zhao LJ (Zhao L. J.); Wasiak M (Wasiak M.); Czyszanowski T (Czyszanowski T.); Nakwaski W (Nakwaski W.)
收藏  |  浏览/下载：31/0  |  提交时间：2010/11/14
Hydride Vapor Phase Epitaxy Growth of Semipolar, 10(1)over-bar(3)over-barGaN on Patterned m-Plane Sapphire 期刊论文
journal of the electrochemical society, 2010, 卷号: 157, 期号: 7, 页码: h721-h726
Wei TB (Wei T. B.); Hu Q (Hu Q.); Duan RF (Duan R. F.); Wei XC (Wei X. C.); Yang JK (Yang J. K.); Wang JX (Wang J. X.); Zeng YP (Zeng Y. P.); Wang GH (Wang G. H.); Li JM (Li J. M.)
收藏  |  浏览/下载：292/52  |  提交时间：2010/06/18
Growth of (10(1)over-bar(3)over-bar) semipolar GaN on m-plane sapphire by hydride vapor phase epitaxy 期刊论文
journal of crystal growth, 2009, 卷号: 311, 期号: 17, 页码: 4153-4157
作者:  Wei TB;  Wei XC;  Duan RF
收藏  |  浏览/下载：84/6  |  提交时间：2010/03/08
The field emission properties of nonpolar a-plane n-type GaN films grown on nano-patterned sapphire substrates 期刊论文
physica status solidi a-applications and materials science, 2009, 卷号: 206, 期号: 7, 页码: 1501-1503
Sun LL; Yan FW; Wang JX; Zhang HX; Zeng YP; Wang GH; Li JM
收藏  |  浏览/下载：55/1  |  提交时间：2010/03/08

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