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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Investigation of oxygen vacancy and interstitial oxygen defects in ZnO films by photoluminescence and x-ray photoelectron spectroscopy 期刊论文 chinese physics letters, 2007, 卷号: 24, 期号: 7, 页码: 2108-2111 Fan HB (Fan Hai-Bo); Yang SY (Yang Shao-Yan); Zhang PF (Zhang Pan-Feng); Wei HY (Wei Hong-Yuan); Liu XL (Liu Xiang-Lin); Jiao CM (Jiao Chun-Mei); Zhu QS (Zhu Qin-Sheng); Chen YH (Chen Yong-Hai); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：83/0  |  提交时间：2010/03/29 THIN-FILMS   Neutron irradiation-infrared based measurement method for interstitial oxygen in heavily boron-doped silicon 期刊论文 semiconductor science and technology, 1999, 卷号: 14, 期号: 1, 页码: 74-76 Wang QY; Ma ZY; Cai TH; Yu YH; Lin LY 收藏  |  浏览/下载：42/0  |  提交时间：2010/08/12 Low-temperature (10 K) infrared measurement of interstitial oxygen in heavily antimony-doped silicon via wafer thinning 期刊论文 semiconductor science and technology, 1997, 卷号: 12, 期号: 4, 页码: 464-466 Wang QY; Cai TH; Yu YH; Lin LY 收藏  |  浏览/下载：13/0  |  提交时间：2010/11/17 Determination of interstitial oxygen concentration in heavily doped silicon by combination of neutron irradiation and FTIR 期刊论文 半导体学报, 1994, 卷号: 15, 期号: 3, 页码: 217 Ma Zhenyu; Wang Qiyuan; Zan Yude; Cai Tianhai; Yu Yuanhuan; Lin Lanying 收藏  |  浏览/下载：13/0  |  提交时间：2010/11/23