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CORC

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Fermi-Level Pinning at Metal/High-k Interface Influenced by Electron State Density of Metal Gate 期刊论文
ieee electron device letters, 2010, 卷号: 31, 期号: 10, 页码: 1101-1103
Yang ZC (Yang Z. C.); Huang AP (Huang A. P.); Zheng XH (Zheng X. H.); Xiao ZS (Xiao Z. S.); Liu XY (Liu X. Y.); Zhang XW (Zhang X. W.); Chu PK (Chu Paul K.); Wang WW (Wang W. W.)
收藏  |  浏览/下载：62/0  |  提交时间：2010/11/14
Study on Broadband Emitting Self-Assembled Quantum-Dot Material and Devices 会议论文
3rd ieee international nanoelectronics conference, hong kong, peoples r china, jan 03-08, 2010
Jin P (Jin P.); Lv XQ (Lv X. Q.); Liu N (Liu N.); Zhang ZY (Zhang Z. Y.); Wang ZG (Wang Z. G.)
收藏  |  浏览/下载：33/0  |  提交时间：2010/11/01
Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes 期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 20, 页码: art. no. 201102
You JB (You J. B.); Zhang XW (Zhang X. W.); Zhang SG (Zhang S. G.); Wang JX (Wang J. X.); Yin ZG (Yin Z. G.); Tan HR (Tan H. R.); Zhang WJ (Zhang W. J.); Chu PK (Chu P. K.); Cui B (Cui B.); Wowchak AM (Wowchak A. M.); Dabiran AM (Dabiran A. M.); Chow PP (Chow P. P.)
收藏  |  浏览/下载：225/45  |  提交时间：2010/06/18
Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks 期刊论文
applied physics letters, 2010, 卷号: 97, 期号: 13, 页码: art. no. 132908
Zheng XH (Zheng X. H.); Huang AP (Huang A. P.); Xiao ZS (Xiao Z. S.); Yang ZC (Yang Z. C.); Wang M (Wang M.); Zhang XW (Zhang X. W.); Wang WW (Wang W. W.); Chu PK (Chu Paul K.)
收藏  |  浏览/下载：10/0  |  提交时间：2010/11/14
OXYGEN  GATE  DIFFUSION  FILMS  
Ordered FePt Nanoparticle Arrays Prepared by a Micellar Method 会议论文
3rd ieee international nanoelectronics conference, hong kong, peoples r china, jan 03-08, 2010
Gao Y (Gao Y.); Zhang XW (Zhang X. W.); Qu S (Qu S.); You JB (You J. B.); Yin ZG (Yin Z. G.); Chen NF (Chen N. F.)
收藏  |  浏览/下载：30/0  |  提交时间：2010/11/01
Effects of Hydrogen Plasma Treatment on the Electrical and Optical Properties of ZnO Films: Identification of Hydrogen Donors in ZnO 期刊论文
acs applied materials & interfaces, 2010, 卷号: 2, 期号: 6, 页码: 1780-1784
Dong JJ (Dong J. J.); Zhang XW (Zhang X. W.); You JB (You J. B.); Cai PF (Cai P. F.); Yin ZG (Yin Z. G.); An Q (An Q.); Ma XB (Ma X. B.); Jin P (Jin P.); Wang ZG (Wang Z. G.); Chu PK (Chu Paul K.)
收藏  |  浏览/下载：151/22  |  提交时间：2010/07/05
High Quality AlGaN Grown on GaN Template with HT-AlN Interlayer 会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
Yan, JC; Wang, JX; Liu, Z; Liu, NX; Li, JM
收藏  |  浏览/下载：46/0  |  提交时间：2010/03/09
DIODES  
Evolution of wetting layers in InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy 会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
作者:  Xu B;  Jin P
收藏  |  浏览/下载：37/0  |  提交时间：2010/03/09
INAS  
AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD 会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
作者:  Hou QF;  Zhang ML
收藏  |  浏览/下载：51/0  |  提交时间：2010/03/09
Operational Optimization of GaN Thin Film Growth Employing Numerical Simulation in a Showerhead MOCVD Reactor 会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
Yin, HB; Wang, XL; Hu, GX; Ran, JX; Xiao, HL; Li, JM
收藏  |  浏览/下载：41/0  |  提交时间：2010/03/09

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