已选(0)清除
条数/页: 排序方式:
|
| Single Neutral Excitons Confined in AsBr3 In Situ Etched In GaAs Quantum Rings 期刊论文 journal of nanoelectronics and optoelectronics, 2011, 卷号: 6, 期号: 1, 页码: 51-57 Ding F; Li B; Akopian N; Perinetti U; Chen YH; Peeters FM; Rastelli A; Zwiller V; Schmidt OG 收藏  |  浏览/下载:71/5  |  提交时间:2011/07/05
|
| Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device 期刊论文 chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: art. no. 064202 作者: Jin P 收藏  |  浏览/下载:43/4  |  提交时间:2011/07/15
|
| Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density 期刊论文 journal of physics d-applied physics, 2010, 卷号: 43, 期号: 48, 页码: art. no. 485102 Zhou XL (Zhou X. L.); Chen YH (Chen Y. H.); Jia CH (Jia C. H.); Ye XL (Ye X. L.); Xu B (Xu Bo); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载:18/0  |  提交时间:2010/12/12
|
| The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy 期刊论文 journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: art. no. 083513 Zhou GY (Zhou G. Y.); Chen YH (Chen Y. H.); Tang CG (Tang C. G.); Liang LY (Liang L. Y.); Jin P (Jin P.); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载:13/0  |  提交时间:2010/12/05
|
| Ag surface plasmon enhanced double-layer antireflection coatings for GaAs solar cells 期刊论文 半导体学报, 2009, 卷号: 30, 期号: 7, 页码: 17-21 作者: Yang Xiaoli; Wang Yu; Zhang Xingwang; Huang Tianmao 收藏  |  浏览/下载:23/0  |  提交时间:2010/11/23 |
| Peculiar photocurrent response due to Gamma-X coupling in a GaAs/AlAs heterostructure 期刊论文 semiconductor science and technology, 2006, 卷号: 21, 期号: 5, 页码: 643-646 Hu B; Zheng HZ; Peng J; Li GR; Li YH 收藏  |  浏览/下载:56/0  |  提交时间:2010/04/11
|
| Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer 期刊论文 journal of the electrochemical society, 2006, 卷号: 153, 期号: 7, 页码: g703-g706 作者: Ye XL; Xu B; Jin P 收藏  |  浏览/下载:90/0  |  提交时间:2010/04/11
|
| InAs/GaAs quantum-dot superluminescent diodes with 110 nm bandwidth 期刊论文 electronics letters, 2005, 卷号: 41, 期号: 25, 页码: 1400-1402 作者: Jin P 收藏  |  浏览/下载:51/0  |  提交时间:2010/04/11
|
| Formation of ferromagnetic clusters in GaAs matrix and GaAs/AlGaAs superlattice through Mn ion implantation at two different temperatures 期刊论文 journal of crystal growth, 2004, 卷号: 268, 期号: 1-2, 页码: 12-17 Wang CH; Chen YH; Yu G; Wang ZG 收藏  |  浏览/下载:263/86  |  提交时间:2010/03/09
|
| Optical properties of InGaAs quantum dots formed on InAlAs wetting layer 期刊论文 journal of crystal growth, 2001, 卷号: 224, 期号: 1-2, 页码: 41-46 作者: Xu B; Ye XL 收藏  |  浏览/下载:77/2  |  提交时间:2010/08/12
|