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科研机构
半导体研究所 [28]
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期刊论文 [22]
会议论文 [6]
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2010 [1]
2009 [1]
2008 [2]
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2005 [3]
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半导体材料 [28]
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The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy
期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: art. no. 083513
Zhou GY (Zhou G. Y.)
;
Chen YH (Chen Y. H.)
;
Tang CG (Tang C. G.)
;
Liang LY (Liang L. Y.)
;
Jin P (Jin P.)
;
Wang ZG (Wang Z. G.)
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2010/12/05
QUANTUM-DOT SYSTEM
ISLAND FORMATION
IN-SITU
EVOLUTION
GAAS
PHOTOLUMINESCENCE
Boron-doped silicon film as a recombination layer in the tunnel junction of a tandem solar cell
期刊论文
半导体学报, 2009, 卷号: 30, 期号: 6, 页码: 25-28
作者:
Liu Shiyong
;
Peng Wenbo
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  |  
浏览/下载:13/0
  |  
提交时间:2010/11/23
Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy
会议论文
2nd ieee international nanoelectronics conference, shanghai, peoples r china, mar 24-27, 2008
Liang, LY
;
Ye, XL
;
Jin, P
;
Chen, YH
;
Wang, ZG
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  |  
浏览/下载:28/0
  |  
提交时间:2010/03/09
INDUCED REFRACTIVE-INDEX
GROWTH
LASERS
GAAS
High epitaxial growth rate of 4H-SiC using TCS as silicon precursor
会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
Ji, G
;
Sun, GS
;
Ning, J
;
Liu, XF
;
Zhao, YM
;
Wang, L
;
Zhao, WS
;
Zeng, YP
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/03/09
Improved field emission properties from metal-coated diamond films
期刊论文
diamond and related materials, 2007, 卷号: 16, 期号: 3, 页码: 650-653
Zhao YM (Zhao Yongmei)
;
Zhang BL (Zhang Binglin)
;
Yao N (Yao Ning)
;
Sun GS (Sun Guosheng)
;
Li JM (Li Jinmin)
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2010/03/29
MWPCVD diamond films
Photoluminescence investigation of InAs bimodal self-assembled quantum dots state filling
期刊论文
spectroscopy and spectral analysis, 2007, 卷号: 27, 期号: 11, 页码: 2178-2181
Jia, GZ
;
Yao, JH
;
Zhang, CL
;
Shu, Q
;
Liu, RB
;
Ye, XL
;
Wang, ZG
收藏
  |  
浏览/下载:60/2
  |  
提交时间:2010/03/08
photoluminescence spectroscopy
quantum dot
bimodal distribution
state-filling
Evolution of wetting layer of InAs/GaAs quantum dots studied by reflectance difference spectroscopy
期刊论文
applied physics letters, 2006, 卷号: 88, 期号: 7, 页码: art.no.071903
作者:
Jin P
收藏
  |  
浏览/下载:547/12
  |  
提交时间:2010/04/11
GROWTH
INAS
GAAS
SURFACES
Growth and characterization of semi-insulating GaN films grown by MOCVD
期刊论文
journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 14-18
Fang CB
;
Wang XL
;
Hu GX
;
Wang JX
;
Wang CM
;
Li JM
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  |  
浏览/下载:49/0
  |  
提交时间:2010/04/11
MOCVD
GaN
resistivity
TSC
N-TYPE GAN
DOPED GAN
SPECTROSCOPY
CARBON
FE
Nanocrystalline silicon films with high conductivity and the application for PIN solar cells
期刊论文
vacuum, 2006, 卷号: 81, 期号: 1, 页码: 126-128
Min C (Cui Min)
;
Zhang WJ (Zhang Weija)
;
Wang TM (Wang Tianmin)
;
Jin F (Jin Fei)
;
Li GH (Li Guohua)
;
Ding K (Ding Kun)
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2010/04/11
nc-Si : H
conductivity
PECVD
films
solar cells
Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer
期刊论文
journal of the electrochemical society, 2006, 卷号: 153, 期号: 7, 页码: g703-g706
作者:
Ye XL
;
Xu B
;
Jin P
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  |  
浏览/下载:90/0
  |  
提交时间:2010/04/11
GAAS
SPECTROSCOPY
PARAMETERS
TRANSPORT
LASERS
ENERGY
STATES
HOLE
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