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CORC

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Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Pan X
收藏  |  浏览/下载：20/0  |  提交时间：2011/09/14
Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cells 期刊论文
journal of non-crystalline solids, 2006, 卷号: 352, 期号: 9-20, 页码: 1900-1903
Hu ZH (Hu Zhihua); Liao XB (Liao Xianbo); Diao HW (Diao Hongwei); Cai Y (Cai Yi); Zhang SB (Zhang Shibin); Fortunato E (Fortunato Elvira); Martins R (Martins Rodrigo)
收藏  |  浏览/下载：59/0  |  提交时间：2010/04/11
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces 期刊论文
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 275-278
Sun GS (Sun G. S.); Liu XF (Liu X. F.); Gong QC (Gong Q. C.); Wang L (Wang L.); Zhao WS (Zhao W. S.); Li JY (Li J. Y.); Zeng YP (Zeng Y. P.); Li JM (Li J. M.)
收藏  |  浏览/下载：44/0  |  提交时间：2010/04/11
Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping 期刊论文
journal of crystal growth, 2002, 卷号: 235, 期号: 1-4, 页码: 207-211
作者:  Zhang SM
收藏  |  浏览/下载：92/4  |  提交时间：2010/08/12
Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching 期刊论文
journal of crystal growth, 2002, 卷号: 240, 期号: 3-4, 页码: 368-372
作者:  Zhao DG
收藏  |  浏览/下载：61/0  |  提交时间：2010/08/12
Effect of ion-induced damage on GaNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy 期刊论文
journal of crystal growth, 2001, 卷号: 223, 期号: 1-2, 页码: 140-144
Li LH; Pan Z; Zhang W; Lin YW; Wang XY; Wu RH; Ge WK
收藏  |  浏览/下载：99/7  |  提交时间：2010/08/12
Raman scattering and infrared absorption of silicon nanocrystals in silicon oxide matrix 会议论文
4th international conference on thin film physics and applications, shanghai, peoples r china, may 08-11, 2000
Ma ZX; Liao XB; Zheng WM; Yu J; Chu JH
收藏  |  浏览/下载：16/0  |  提交时间：2010/10/29
The growth and characterization of GaN grown on an Al2O3 coated (001)Si substrate by metalorganic vapor phase epitaxy 期刊论文
journal of crystal growth, 1998, 卷号: 193, 期号: 4, 页码: 484-490
Wang LS; Liu XL; Zan YD; Wang D; Lu DC; Wang ZG; Wang YT; Cheng LS; Zhang Z
收藏  |  浏览/下载：47/0  |  提交时间：2010/08/12

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