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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy 期刊论文 journal of crystal growth, 2010, 卷号: 312, 期号: 9, 页码: 1491-1495 Zhao J (Zhao Jie); Zeng YP (Zeng Yiping); Liu C (Liu Chao); Li YB (Li Yanbo) 收藏  |  浏览/下载：148/33  |  提交时间：2010/06/04 Reflection high-energy electron diffraction  Atomic force microscopy  Molecular beam epitaxy  Zinc compounds  Semiconducting II-VI materials   Evolution of InAs/GaAs(001) islands during the two- to three-dimensional growth mode transition in molecular-beam epitaxy 期刊论文 nanotechnology, 2007, 卷号: 18, 期号: 16, 页码: art.no.165301 Wu, J (Wu, J.); Jin, P (Jin, P.); Jiao, YH (Jiao, Y. H.); Lv, XJ (Lv, X. J.); Wang, ZG (Wang, Z. G.) 收藏  |  浏览/下载：28/0  |  提交时间：2010/03/29 ASSEMBLED QUANTUM DOTS   Effects of different modified underlayer surfaces on growth and optical properties of InGaN quantum dots 期刊论文 vacuum, 2005, 卷号: 77, 期号: 3, 页码: 307-314 Han, XX; Li, JM; Wu, JJ; Wang, XH; Li, DB; Liu, XL; Han, PD; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：28/0  |  提交时间：2010/03/17 nanostructure   Substrate surface atomic structure influence on the growth of InAlAs quantum dots 期刊论文 journal of crystal growth, 1999, 卷号: 200, 期号: 3-4, 页码: 608-612 作者:  Xu B 收藏  |  浏览/下载：36/0  |  提交时间：2010/08/12 photoluminescence  atomic-terminated surface  quantum dots  MOLECULAR-BEAM EPITAXY  VISIBLE PHOTOLUMINESCENCE  MONOLAYER COVERAGE  INAS  GAAS  GE  INXGA1-XAS  ENSEMBLES  GAAS(100)  3-DIMENSIONAL ISLAND FORMATION   Dislocations in InAs epilayers grown by MBE on GaAs substrates under various conditions 会议论文 symposium on electron microscopy of semiconducting materials and ulsi devices at the spring materials-research-society meeting, san francisco, ca, apr 15-16, 1998 Wang HM; Zeng YP; Pan L; Zhou HW; Zhu ZP; Kong MY 收藏  |  浏览/下载：17/0  |  提交时间：2010/10/29