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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体材料    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy 会议论文 2nd ieee international nanoelectronics conference, shanghai, peoples r china, mar 24-27, 2008 Liang, LY; Ye, XL; Jin, P; Chen, YH; Wang, ZG 收藏  |  浏览/下载：28/0  |  提交时间：2010/03/09 INDUCED REFRACTIVE-INDEX  GROWTH  LASERS  GAAS   High quality microcrystalline Si films by hydrogen dilution profile 会议论文 12th international conference on thin films, bratislava, slovakia, sep 15-20, 2002 Gu, JH (Gu, Jinhua); Zhu, MF (Zhu, Meifang); Wang, LJ (Wang, Liujiu); Liu, FZ (Liu, Fengzhen); Zhou, BQ (Zhou, Bingqing); Ding, K (Ding, Kun); Li, GH (Li, Guohua) 收藏  |  浏览/下载：189/19  |  提交时间：2010/03/29 microcrystalline Si thin film   Micro-fabricated Al0.3Ga0.7As pyramids for potential SPM applications 会议论文 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 Sun, J; Hu, LZ; Sun, YC; Wang, ZY 收藏  |  浏览/下载：59/0  |  提交时间：2010/03/29 GROWTH   Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates 会议论文 international conference on material for advanced technologies, singapore, singapore, jul 01-06, 2001 Xie MH; Cheung SH; Zheng LX; Tong SY; Zhang BS; Yang H 收藏  |  浏览/下载：8/0  |  提交时间：2010/11/15 MOLECULAR-BEAM EPITAXY   The effect of low temperature GaAs nucleation on the growth of GaN on Silicon (001) during MOVPE process 会议论文 symposium on nitride semiconductors, at the 1997 mrs fall meeting, boston, ma, dec 01-05, 1997 Zheng LX; Liang JW; Yang H; Li JB; Wang YT; Xu DP; Li XF; Duan LH; Hu XW 收藏  |  浏览/下载：12/0  |  提交时间：2010/10/29 Structural and optical changes in GaAs/InAs/GaAs structure induced by thermal annealing 会议论文 5th international conference on solid-state and integrated circuit technology, beijing, peoples r china, oct 21-23, 1998 Mo QW; Fan TW; Gong Q; Wu J; Wang ZG; Bai YQ; Zhang W 收藏  |  浏览/下载：25/0  |  提交时间：2010/10/29 MOLECULAR-BEAM EPITAXY  COHERENT ISLANDS  GAAS  GROWTH  DOTS  DISLOCATIONS  TEMPERATURE  MECHANISMS  SI(001)  INGAAS