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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 学科主题：半导体材料    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Raman scattering study on vibrational modes in Ga1-xMnxN prepared by Mn-ion implantation 会议论文 11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005 Islam MR; Chen NF; Yamada M 收藏  |  浏览/下载：126/8  |  提交时间：2010/03/29 Raman scattering   Hydrogen behavior in GaN epilayers grown by NH3-MBE 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Kong MY; Zhang JP; Wang XL; Sun DZ 收藏  |  浏览/下载：12/0  |  提交时间：2010/11/15 impurities  molecular beam epitaxy  nitrides  semiconducting III-V materials  GALLIUM NITRIDE  SAPPHIRE SUBSTRATE  DEFECTS  HETEROSTRUCTURE  SEMICONDUCTORS  STRESS   Observation of deep electron states in n-type Al-doped ZnS1-xTex grown by molecular beam epitaxy 会议论文 6th international conference on solid-state and integrated-circuit technology, shanghai, peoples r china, oct 22-25, 2001 Lu LW; Ge WK; Sou IK; Wang J 收藏  |  浏览/下载：15/0  |  提交时间：2010/10/29 ZNSTE   Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy 会议论文 50th iumrs international conference on advanced materials, beijing, peoples r china, jun 13-18, 1999 作者:  Xu B;  Ye XL 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 quantum dots  high index  molecular beam epitaxy  photoluminescence  SURFACE SEGREGATION  ORIENTED GAAS  INGAAS  ISLANDS  WELLS  DISKS