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浏览/检索结果: 共2条，第1-2条 帮助 限定条件 学科主题：半导体器件     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Investigation on the N-eff reverse annealing effect using TSC/I-DLTS: Relationship between neutron induced microscopic defects and silicon detector electrical degradations 期刊论文 nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment, 1996, 卷号: 377, 期号: 0, 页码: 265-275 Li Z; Li CJ; Eremin V; Verbitskaya E 收藏  |  浏览/下载：12/0  |  提交时间：2010/11/17 RADIATION-DAMAGE  RESISTIVITY   STUDY OF THE LONG-TERM STABILITY OF THE EFFECTIVE CONCENTRATION OF IONIZED SPACE CHARGES (N-EFF) OF NEUTRON-IRRADIATED SILICON DETECTORS FABRICATED BY VARIOUS THERMAL-OXIDATION PROCESSES 期刊论文 ieee transactions on nuclear science, 1995, 卷号: 42, 期号: 4, 页码: 219-223 LI Z; CHEN W; DOU L; EREMIN V; KRANER HW; LI CJ; LINDSTROEM G; SPIRITI E 收藏  |  浏览/下载：5/0  |  提交时间：2010/11/17 RADIATION-DAMAGE