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High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition 期刊论文
aip advances, 2016, 卷号: 6, 期号: 6, 页码: 065301
Shuo Zhang; Ping Ma; Boting Liu; Dongxue Wu; Yuliang Huang; Junxi Wang; Jinmin Li
收藏  |  浏览/下载:14/0  |  提交时间:2017/03/16
Optimized subsequent-annealing-free Ni/Ag based metallization contact to p-type GaN for vertical light emitting diodes with high yield and extremely low operating voltage 期刊论文
journal of physics d-applied physics, 2014, 卷号: 47, 期号: 11, 页码: 115102
Tian, T; Wang, LC; Guo, EQ; Liu, ZQ; Zhan, T; Guo, JX; Yi, XY; Li, J; Wang, GH
收藏  |  浏览/下载:23/0  |  提交时间:2015/04/02
Higher oxidization rate of photo-assisted annealing compared with thermal annealing after YBa2Cu3O7-delta films growth 期刊论文
physica c-superconductivity and its applications, 2014, 卷号: 507, 页码: 17-21
Li, Guoxing; Li, Shanwen; Li, Wei; Wang, Xinsheng; Guo, Feng; Zhang, Baolin; Chou, PenChu
收藏  |  浏览/下载:28/0  |  提交时间:2015/01/29
Temperature-stimulated abnormal annealing of neutron-induced damage in high-resistivity silicon detectors 期刊论文
nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment, 1997, 卷号: 385, 期号: 2, 页码: 321-329
Li Z; Li CJ; Verbitskaya E; Eremin V
收藏  |  浏览/下载:16/0  |  提交时间:2010/11/17
Investigation on the N-eff reverse annealing effect using TSC/I-DLTS: Relationship between neutron induced microscopic defects and silicon detector electrical degradations 期刊论文
nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment, 1996, 卷号: 377, 期号: 0, 页码: 265-275
Li Z; Li CJ; Eremin V; Verbitskaya E
收藏  |  浏览/下载:13/0  |  提交时间:2010/11/17
Microscopic analysis of defects in a high resistivity silicon detector irradiated to 1.7x10(15)n/cm(2) 期刊论文
ieee transactions on nuclear science, 1996, 卷号: 43, 期号: 3, 页码: 1590-1598
Li Z; Ghislotti G; Kraner HW; Li CJ; Nielsen B; Feick H; Lindstroem G
收藏  |  浏览/下载:15/0  |  提交时间:2010/11/17
STUDY OF THE LONG-TERM STABILITY OF THE EFFECTIVE CONCENTRATION OF IONIZED SPACE CHARGES (N-EFF) OF NEUTRON-IRRADIATED SILICON DETECTORS FABRICATED BY VARIOUS THERMAL-OXIDATION PROCESSES 期刊论文
ieee transactions on nuclear science, 1995, 卷号: 42, 期号: 4, 页码: 219-223
LI Z; CHEN W; DOU L; EREMIN V; KRANER HW; LI CJ; LINDSTROEM G; SPIRITI E
收藏  |  浏览/下载:6/0  |  提交时间:2010/11/17
EFFECTS OF 1-MEV-ELECTRON IRRADIATION ON A-SI SOLAR-CELLS 期刊论文
solar energy materials and solar cells, 1994, 卷号: 34, 期号: 0, 页码: 571-575
LI LQ; PAN GQ; DIAO HW; LIAO XB; YOU ZP
收藏  |  浏览/下载:29/0  |  提交时间:2010/11/15
A COMPARATIVELY LOW-QUALITY SILICON MATERIAL IMPROVED FOR SOLAR-CELL FABRICATION 期刊论文
solar energy materials and solar cells, 1993, 卷号: 28, 期号: 4, 页码: 381-383
LI JM; CHONG M; ZHU JC
收藏  |  浏览/下载:11/0  |  提交时间:2010/11/15


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