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Investigation on the N-eff reverse annealing effect using TSC/I-DLTS: Relationship between neutron induced microscopic defects and silicon detector electrical degradations 期刊论文
nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment, 1996, 卷号: 377, 期号: 0, 页码: 265-275
Li Z; Li CJ; Eremin V; Verbitskaya E
收藏  |  浏览/下载:12/0  |  提交时间:2010/11/17
Microscopic analysis of defects in a high resistivity silicon detector irradiated to 1.7x10(15)n/cm(2) 期刊论文
ieee transactions on nuclear science, 1996, 卷号: 43, 期号: 3, 页码: 1590-1598
Li Z; Ghislotti G; Kraner HW; Li CJ; Nielsen B; Feick H; Lindstroem G
收藏  |  浏览/下载:15/0  |  提交时间:2010/11/17
DEVELOPMENT OF CURRENT-BASED MICROSCOPIC DEFECT ANALYSIS-METHODS AND ASSOCIATED OPTICAL FILLING TECHNIQUES FOR THE INVESTIGATION ON HIGHLY IRRADIATED HIGH-RESISTIVITY SILICON DETECTORS 期刊论文
nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment, 1995, 卷号: 364, 期号: 1, 页码: 108-117
LI CJ; LI Z
收藏  |  浏览/下载:13/0  |  提交时间:2010/11/17


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