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The optimization of large gap-midgap ratio photonic crystal with improved Bisection-Particle Swarm Optimization 期刊论文
optics communications, 2011, 卷号: 284, 期号: 1, 页码: 226-230
作者:  Jiang B
收藏  |  浏览/下载:49/3  |  提交时间:2011/07/06
Optical properties of InN rods on sapphire grown by metal-organic chemical vapor deposition 期刊论文
physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 138-141
作者:  Zhang SM
收藏  |  浏览/下载:58/1  |  提交时间:2011/07/05
Design of novel polarization beam splitter in two-dimensional photonic crystal 期刊论文
acta physica sinica, 2010, 卷号: 59, 期号: 8, 页码: 5547-5552
Guo H (Guo Hao); Wu P (Wu Ping); Yu TB (Yu Tian-Bao); Liao QH (Liao Qing-Hua); Liu NH (Liu Nian-Hua); Huang YZ (Huang Yong-Zhen)
收藏  |  浏览/下载:59/1  |  提交时间:2010/09/07
Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties 期刊论文
physica b-condensed matter, 2010, 卷号: 405, 期号: 22, 页码: 4668-4672
Wang H (Wang H.); Jiang DS (Jiang D. S.); Jahn U (Jahn U.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Qiu YX (Qiu Y. X.); Yang H (Yang H.)
收藏  |  浏览/下载:35/0  |  提交时间:2010/12/12
Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition 期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 14, 页码: art. no. 145410
作者:  Zhang SM;  Yang H;  Yang H;  Wang YT;  Zhu JJ
收藏  |  浏览/下载:72/0  |  提交时间:2010/03/08
Revised ab initio natural band offsets of all group IV, II-VI, and III-V semiconductors 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 21, 页码: art. no. 212109
作者:  Li JB
收藏  |  浏览/下载:112/0  |  提交时间:2010/03/08
The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD 期刊论文
semiconductor science and technology, 2009, 卷号: 24, 期号: 5, 页码: art. no. 055001
作者:  Yang H;  Jiang DS;  Zhao DG;  Zhang SM;  Yang H
收藏  |  浏览/下载:88/41  |  提交时间:2010/03/08
Suppression of indium droplet formation by adding CCl4 during metalorganic chemical vapor deposition growth of InN films 期刊论文
semiconductor science and technology, 2009, 卷号: 24, 期号: 7, 页码: art. no. 075004
作者:  Wang H;  Yang H;  Yang H;  Zhao DG;  Wang YT
收藏  |  浏览/下载:47/1  |  提交时间:2010/03/08
Investigation on the structural origin of n-type conductivity in InN films 期刊论文
journal of physics d-applied physics, 2008, 卷号: 41, 期号: 13, 页码: art. no. 135403
Wang, H; Jiang, DS; Wang, LL; Sun, X; Liu, WB; Zhao, DG; Zhu, JJ; Liu, ZS; Wang, YT; Zhang, SM; Yang, H
收藏  |  浏览/下载:53/1  |  提交时间:2010/03/08
Effects of grain size on the mosaic tilt and twist in InN films grown on GaN by metal-organic chemical vapor deposition 期刊论文
applied physics letters, 2006, 卷号: 89, 期号: 9, 页码: art.no.092114
Wang H (Wang H.); Huang Y (Huang Y.); Sun Q (Sun Q.); Chen J (Chen J.); Wang LL (Wang L. L.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Zhang SM (Zhang S. M.); Jiang DS (Jiang D. S.); Wang YT (Wang Y. T.); Yang H (Yang H.)
收藏  |  浏览/下载:42/0  |  提交时间:2010/04/11


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