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科研机构
半导体研究所 [26]
内容类型
期刊论文 [17]
会议论文 [9]
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2010 [4]
2009 [3]
2008 [4]
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光电子学 [26]
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Improvement of efficiency droop of GaN-based light-emitting devices by a rear nitride reflector
期刊论文
physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 289-292
Cai LE
;
Zhang BP
;
Zhang JY
;
Wu CM
;
Jiang F
;
Hu XL
;
Chen M
;
Wang QM
收藏
  |  
浏览/下载:43/1
  |  
提交时间:2011/07/05
DIODES
Normal incidence p-i-n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition
期刊论文
optics communications, 2010, 卷号: 283, 期号: 18, 页码: 3404-3407
Zhou ZW (Zhou Zhiwen)
;
He JK (He Jingkai)
;
Wang RC (Wang Ruichun)
;
Li C (Li Cheng)
;
Yu JZ (Yu Jinzhong)
收藏
  |  
浏览/下载:85/0
  |  
提交时间:2010/08/17
Germanium
Hererojunction
Photodiode
Tensile strain
Effects of GaN Capping on the Structural and the Optical Properties of InN Nanostructures Grown by Using MOCVD
期刊论文
journal of the korean physical society, 2010, 卷号: 57, 期号: 1, 页码: 128-132
Sun YP (Sun Yuanping)
;
Sun Y (Sun Yuanping)
;
Cho YH (Cho Yong-Hoon)
;
Wang H (Wang Hui)
;
Wang LL (Wang Lili)
;
Zhang SM (Zhang Shuming)
;
Yang H (Yang Hui)
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  |  
浏览/下载:513/2
  |  
提交时间:2010/08/17
InN
Burstein-Moss effect
Quantum confinement effect
Activation energy
FUNDAMENTAL-BAND GAP
WELL STRUCTURES
EMISSION
SINGLE
Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours
期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 11, 页码: art. no. 114215
Zeng C (Zeng Chang)
;
Zhang SM (Zhang Shu-Ming)
;
Ji L (Ji Lian)
;
Wang HB (Wang Huai-Bing)
;
Zhao DG (Zhao De-Gang)
;
Zhu JJ (Zhu Jian-Jun)
;
Liu ZS (Liu Zong-Shun)
;
Jiang DS (Jiang De-Sheng)
;
Cao Q (Cao Qing)
;
Chong M (Chong Ming)
;
Duan LH (Duan Li-Hong)
;
Wang H (Wang Hai)
;
Shi YS (Shi Yong-Sheng)
;
Liu SY (Liu Su-Ying)
;
Yang H (Yang Hui)
;
Chen LH (Chen Liang-Hui)
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2010/12/05
Fabrication and optical optimization of spot-size converters with strong cladding layers
期刊论文
journal of optics a-pure and applied optics, 2009, 卷号: 11, 期号: 8, 页码: art. no. 085002
作者:
Li Y
收藏
  |  
浏览/下载:63/1
  |  
提交时间:2010/03/08
silicon-on-insulator (SOI)
spot-size converters
Evolution of surface morphology and photoluminescence characteristics of 1.3-mu m In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy
期刊论文
chinese optics letters, 2009, 卷号: 7, 期号: 1, 页码: 52-55
Wei QX
;
Ren ZW
;
He ZH
;
Niu ZC
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  |  
浏览/下载:76/0
  |  
提交时间:2010/03/08
1.3 MU-M
ROOM-TEMPERATURE
OPTICAL-PROPERTIES
CAP LAYER
GAAS
DEPOSITION
Substantial photo-response of InGaN p-i-n homojunction solar cells
期刊论文
semiconductor science and technology, 2009, 卷号: 24, 期号: 5, 页码: art. no. 055009
Zeng SW
;
Zhang BP
;
Sun JW
;
Cai JF
;
Chen C
;
Yu JZ
收藏
  |  
浏览/下载:58/7
  |  
提交时间:2010/03/08
FUNDAMENTAL-BAND GAP
INN
ABSORPTION
ALLOYS
ENERGY
High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates for solid-state lighting - art. no. 684103
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Yan, FW
;
Gao, HY
;
Zhang, Y
;
Li, JM
;
Zeng, YP
;
Wang, GH
;
Yang, FH
收藏
  |  
浏览/下载:134/0
  |  
提交时间:2010/03/09
GaN
MOCVD
LED
nano-pattern
SEM
HRXRD
PL
AlGaN layers grown on AlGaN buffer layer and GaN buffer layer using strain-relief interlayers - art. no. 68410S
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Liu, NX
;
Yan, JC
;
Liu, Z
;
Ma, P
;
Wang, JX
;
Li, JM
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2010/03/09
AlGaN
HT-AlGaN buffer
HT-interlayers
ultraviolet (UV) LED
Thermal test and analysis of concentrator solar cells - art. no. 684117
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Cui M
;
Chen NF
;
Wu JL
;
Liu L
;
Wang P
;
Wang YS
;
Bai YM
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2010/03/09
temperature
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