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Normal incidence p-i-n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition 期刊论文
optics communications, 2010, 卷号: 283, 期号: 18, 页码: 3404-3407
Zhou ZW (Zhou Zhiwen); He JK (He Jingkai); Wang RC (Wang Ruichun); Li C (Li Cheng); Yu JZ (Yu Jinzhong)
收藏  |  浏览/下载:85/0  |  提交时间:2010/08/17
A model of dislocations at the interface of the bonded wafers 会议论文
conference on optical interconnects for telecommunication and data communications, beijing, peoples r china, nov 08-10, 2000
作者:  Han WH;  Wang LC
收藏  |  浏览/下载:16/0  |  提交时间:2010/10/29


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