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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Schottky barrier light emitting diode in standard CMOS technology 期刊论文 group iv photonics (gfp), 2011 8th ieee international conference on, 2011, 页码: 296-298 Huang, Beiju; Wang, Wei; Dong, Zan; Zhang, Zanyun; Guo, Weilian; Chen, Hongda 收藏  |  浏览/下载：22/0  |  提交时间：2012/06/13 CMOS integrated circuits  Diodes  Light  Light emission  Photonics  Schottky barrier diodes  Semiconducting silicon compounds  Semiconductor diodes   Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 5, 页码: art. no. 057802 Zhao DG (Zhao De-Gang); Zhang S (Zhang Shuang); Liu WB (Liu Wen-Bao); Hao XP (Hao Xiao-Peng); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui); Wei L (Wei Long) 收藏  |  浏览/下载：75/2  |  提交时间：2010/05/24 Ga vacancies  MOCVD  GaN  Schottky barrier photodetector  REVERSE-BIAS LEAKAGE  MOLECULAR-BEAM EPITAXY  P-N-JUNCTIONS  POSITRON-ANNIHILATION  DIODES  FILMS   Fabrication and transport properties of ZnO/Nb-1 wt %-doped SrTiO3 epitaxial heterojunctions 期刊论文 applied physics letters, 2008, 卷号: 92, 期号: 1, 页码: art. no. 012115 Wu, YL; Zhang, LW; Xie, GL; Zhu, JL; Chen, YH 收藏  |  浏览/下载：63/3  |  提交时间：2010/03/08 MANGANITE-BASED HETEROJUNCTION  SCHOTTKY CONTACTS  TUNNELING CURRENT  ZNO   Hydrogen sensors based on Pt-AlGN/AIN/GaN Schottky diode - art. no. 68291R 会议论文 conference on advanced materials and devices for sensing and imaging iii, beijing, peoples r china, nov 12-14, 2007 Wang, XH; Wan, XL; Xiao, HL; Feng, C; Way, BZ; Yang, CB; Wang, JX; Wang, CM; Ran, JX; Hu, GX; Li, JM 收藏  |  浏览/下载：31/0  |  提交时间：2010/03/09 hydrogen sensor  AlGaN/GaN heterostructure  Schottky diode   Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts 期刊论文 applied physics letters, 2006, 卷号: 89, 期号: 3, 页码: art.no.033503 Wang RX (Wang R. X.); Xu SJ (Xu S. J.); Djurisic AB (Djurisic A. B.); Beling CD (Beling C. D.); Cheung CK (Cheung C. K.); Cheung CH (Cheung C. H.); Fung S (Fung S.); Zhao DG (Zhao D. G.); Yang H (Yang H.); Tao XM (Tao X. M.) 收藏  |  浏览/下载：26/0  |  提交时间：2010/04/11 MOLECULAR-BEAM EPITAXY  N-TYPE GAN  ELECTRICAL-PROPERTIES  BIAS LEAKAGE  DIODES  OXYGEN   Space-charge-limited currents in GaN Schottky diodes 期刊论文 solid-state electronics, 2005, 卷号: 49, 期号: 5, 页码: 847-852 作者:   收藏  |  浏览/下载：28/0  |  提交时间：2010/03/17 GaN