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Structural characterization of mn implanted AlInN 期刊论文
journal of physics d-applied physics, 2008, 卷号: 41, 期号: 11, 页码: art. no. 115404
Majid A; Ali A; Zhu JJ; Wang YT
收藏  |  浏览/下载：62/3  |  提交时间：2010/03/08
Defects around self-organized InAs quantum dots measured by slow positron beam 期刊论文
applied physics letters, 2007, 卷号: 91, 期号: 9, 页码: art.no.093510
作者:  Jin P
收藏  |  浏览/下载：38/0  |  提交时间：2010/03/29
Strain evolution in GaN layers grown on high-temperature AlN interlayers 期刊论文
applied physics letters, 2006, 卷号: 89, 期号: 15, 页码: art.no.152105
Wang JF (Wang J. F.); Yao DZ (Yao D. Z.); Chen J (Chen J.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Jiang DS (Jiang D. S.); Yang H (Yang H.); Liang JW (Liang J. W.)
收藏  |  浏览/下载：31/0  |  提交时间：2010/04/11
Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer 期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2591-2594
Wang JF (Wang Jian-Feng); Zhang BS (Zhang Bao-Shun); Zhang JC (Zhang Ji-Cai); Zhu JJ (Zhu Jian-Jun); Wang YT (Wang Yu-Tian); Chen J (Chen Jun); Liu W (Liu Wei); Jiang DS (Jiang De-Sheng); Yao DZ (Yao Duan-Zheng); Yang H (Yang Hui)
收藏  |  浏览/下载：29/0  |  提交时间：2010/04/11
Spatial distribution of deep level defects in crack-free AlGaN grown on GaN with a high-temperature AlN interlayer 期刊论文
journal of applied physics, 2006, 卷号: 100, 期号: 12, 页码: art.no.123101
Sun, Q (Sun, Q.); Wang, H (Wang, H.); Jiang, DS (Jiang, D. S.); Jin, RQ (Jin, R. Q.); Huang, Y (Huang, Y.); Zhang, SM (Zhang, S. M.); Yang, H (Yang, H.); Jahn, U (Jahn, U.); Ploog, KH (Ploog, K. H.)
收藏  |  浏览/下载：31/0  |  提交时间：2010/03/29
MOVPE growth of grade-strained bulk InGaAs/InP for broad-band optoelectronic device applications 期刊论文
journal of crystal growth, 2004, 卷号: 260, 期号: 3-4, 页码: 464-468
Wang SR; Wang W; Zhu HL; Zhao LJ; Zhang RY; Zhou F; Shu HY; Wang RF
收藏  |  浏览/下载：353/108  |  提交时间：2010/03/09
High-indium-content InxGa1-xAs/GaAs quantum wells with emission wavelengths above 1.25 mu m at room temperature 期刊论文
applied physics letters, 2004, 卷号: 84, 期号: 25, 页码: 5100-5102
作者:  Xu YQ
收藏  |  浏览/下载：219/54  |  提交时间：2010/03/09
A study of the degree of relaxation of AlGaN epilayers on GaN template 期刊论文
journal of crystal growth, 2004, 卷号: 270, 期号: 3-4, 页码: 289-294
Zhang JC; Wu MF; Wang JF; Liu JP; Wang YT; Chen J; Jin RQ; Yang H
收藏  |  浏览/下载：158/53  |  提交时间：2010/03/09
Photoluminescence properties of self-organized InGaAs/GaAs quantum dot structures 期刊论文
journal of infrared and millimeter waves, 2001, 卷号: 20, 期号: 1, 页码: 20-24
Niu ZC; Wang XD; Miao ZH; Feng SL
收藏  |  浏览/下载：108/4  |  提交时间：2010/08/12
X-ray-diffraction study of quasipseudomorphic ErSi1.7 layers formed by channeled ion-beam synthesis 期刊论文
journal of applied physics, 1996, 卷号: 80, 期号: 10, 页码: 5713-5717
Wu MF; Vantomme A; Pattyn H; Langouche G; Yang QQ; Wang QM
收藏  |  浏览/下载：21/0  |  提交时间：2010/11/17

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