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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Infrared response of the lateral PIN structure of a highly titanium-doped silicon-on-insulator material 期刊论文 chinese physics b, 2011, 卷号: 20, 期号: 10, 页码: 106104 Ma, ZH; Cao, Q; Zuo, YH; Zheng, J; Xue, CL; Cheng, BW; Wang, QM 收藏  |  浏览/下载：24/0  |  提交时间：2012/02/06 infrared response  ion implantation  rapid thermal annealing  intermediate band solar cell  PHOTODIODE   A visible light communication system based on high-power illumination LED lamp 期刊论文 guangdianzi jiguang/journal of optoelectronics laser, 2011, 卷号: 22, 期号: 6, 页码: 803-807 Yang, Yu; Liu, Bo; Zhang, Jian-Kun; Chen, Xiong-Bin; Chen, Hong-Da 收藏  |  浏览/下载：16/0  |  提交时间：2012/06/13 Bit error rate  Computer simulation  Gateways(computer networks)  Lighting  Optical communication  Telecommunication systems   Research on color matching of LED backlight for large-color-gamut LCD application - art. no. 68410Y 会议论文 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Liang, M; Fan, MN; Guo, DB; Liu, GY; Wang, GH; Yang, FH; Wang, LC; Zeng, YP; Li, JM 收藏  |  浏览/下载：42/0  |  提交时间：2010/03/09 LED backlight  three-basic-color  color gamut  relative spectrum distribution (RSD)   Native oxided AlAs current blocking layer for AIGaInP high brightness light emitting diodes 会议论文 4th conference on light-emitting diodes (leds), san jose, ca, jan 26-27, 2000 Wang GH; Ma XY; Zhang YF; Wang ST; Li YZ; Chen LH 收藏  |  浏览/下载：11/0  |  提交时间：2010/10/29 native oxided AlAs  current blocking layer  AlGaInP  high brightness light emitting diodes   The improvement characteristics of homoepitaxial GaAs grown by atomic hydrogen-assisted molecular beam epitaxy 期刊论文 journal of infrared and millimeter waves, 2000, 卷号: 19, 期号: 3, 页码: 191-193 Wang HL; Zhu HJ; Ning D; Wang H; Wang XD; Guo ZS; Feng SL 收藏  |  浏览/下载：83/0  |  提交时间：2010/08/12 atomic hydrogen-assisted molecular beam epitaxy  deep level transient spectroscopy  deep level defects  DISLOCATION DENSITY  IRRADIATION   Photoluminescence measurements on erbium-doped silicon 会议论文 conference on integrated optoelectronics ii, beijing, peoples r china, sep 18-19, 1998 Lei HB; Yang QQ; Ou HY; Wang QM 收藏  |  浏览/下载：22/0  |  提交时间：2010/10/29 erbium-doped silicon  photoluminescence  energy transfer