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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Enhancement of electroluminescence in p-i-n structures with nano-crystalline Si/SiO2 multilayers 期刊论文 semiconductor science and technology, 2008, 卷号: 23, 期号: 1, 页码: art. no. 015013 Chen DY; Wei DY; Xu J; Han PG; Wang X; Ma ZY; Chen KJ; Shi WH; Wang QM 收藏  |  浏览/下载：45/1  |  提交时间：2010/03/08 SILICON NANOCRYSTALS   Stress reduction in GaN films on (111) silicon-on-insulator substrate grown by metal-organic chemical vapor deposition 期刊论文 materials letters, 2007, 卷号: 61, 期号: 22, 页码: 4416-4419 Sun JY (Sun Jiayin); Chen J (Chen Jing); Wang X (Wang Xi); Wang JF (Wang Jianfeng); Liu W (Liu Wei); Zhu JJ (Zhu Jianjun); Yang H (Yang Hui) 收藏  |  浏览/下载：40/0  |  提交时间：2010/03/29 chemical vapor deposition   Study on the thermal stability of InN by in-situ laser reflectance system 期刊论文 journal of crystal growth, 2005, 卷号: 281, 期号: 2-4, 页码: 310-317 Huang Y; Wang H; Sun Q; Chen J; Wang JF; Wang YT; Yang H 收藏  |  浏览/下载：44/12  |  提交时间：2010/03/17 in situ reflectometry   Surface morphology of AlN buffer layer and its effect on GaN growth by metalorganic chemical vapor deposition 期刊论文 applied physics letters, 2004, 卷号: 85, 期号: 9, 页码: 1499-1501 Zhao, DG; Zhu, JJ; Liu, ZS; Zhang, SM; Yang, H; Jiang, DS 收藏  |  浏览/下载：259/63  |  提交时间：2010/03/09 SAPPHIRE SUBSTRATE   In situ annealing during the growth of relaxed SiGe 会议论文 conference on optical and infrared thin films, san diego, ca, 36739 Li DZ; Huang CJ; Cheng BW; Wang HJ; Yu Z; Zhang CH; Yu JZ; Wang QM 收藏  |  浏览/下载：14/0  |  提交时间：2010/10/29 Ultrahigh Vacuum Chemical Vapor Deposition  SiGe  Refractive High Energy Electron Diffraction  tansmission electron microscopy  Double Crystal X-Ray Diffraction  MOBILITY 2-DIMENSIONAL ELECTRON  CRITICAL THICKNESS  STRAINED LAYERS  GE  RELAXATION  EPILAYERS  SI1-XGEX  GESI/SI  GASES   The improvement characteristics of homoepitaxial GaAs grown by atomic hydrogen-assisted molecular beam epitaxy 期刊论文 journal of infrared and millimeter waves, 2000, 卷号: 19, 期号: 3, 页码: 191-193 Wang HL; Zhu HJ; Ning D; Wang H; Wang XD; Guo ZS; Feng SL 收藏  |  浏览/下载：83/0  |  提交时间：2010/08/12 atomic hydrogen-assisted molecular beam epitaxy  deep level transient spectroscopy  deep level defects  DISLOCATION DENSITY  IRRADIATION