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科研机构
半导体研究所 [26]
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期刊论文 [23]
会议论文 [3]
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2011 [2]
2009 [2]
2008 [3]
2006 [8]
2002 [1]
2001 [2]
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光电子学 [26]
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Metal electrode influence on the wet selective etching of GaAs/AlGaAs
期刊论文
journal of vacuum science & technology b, 2011, 卷号: 29, 期号: 4, 页码: 41208
Wang J
;
Han Q
;
Yang XH
;
Wang XP
;
Ni HQ
;
He JF
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2012/02/06
HYDROGEN-PEROXIDE SOLUTIONS
III-V SEMICONDUCTORS
PSEUDOMORPHIC MODFETS
GAAS
FABRICATION
TRANSISTOR
ALGAAS
Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 10, 页码: 103002
Zhang, Yu
;
Wang, Guowei
;
Tang, Bao
;
Xu, Yingqiang
;
Xu, Yun
;
Song, Guofeng
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2012/06/14
Buffer layers
Epitaxial growth
Gallium alloys
Indium antimonides
Molecular beam epitaxy
Molecular beams
Optical waveguides
Optimization
Semiconducting gallium arsenide
Semiconductor quantum wells
Tellurium
Tellurium compounds
Evolution of surface morphology and photoluminescence characteristics of 1.3-mu m In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy
期刊论文
chinese optics letters, 2009, 卷号: 7, 期号: 1, 页码: 52-55
Wei QX
;
Ren ZW
;
He ZH
;
Niu ZC
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  |  
浏览/下载:77/0
  |  
提交时间:2010/03/08
1.3 MU-M
ROOM-TEMPERATURE
OPTICAL-PROPERTIES
CAP LAYER
GAAS
DEPOSITION
Fabry-Perot microcavity modes observed in the micro-photoluminescence spectra of the single nanowire with InGaAs/GaAs heterostructure
期刊论文
optics express, 2009, 卷号: 17, 期号: 11, 页码: 9337-9346
作者:
Chen P
;
Zhang L
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  |  
浏览/下载:40/0
  |  
提交时间:2010/03/08
BUILDING-BLOCKS
WAVE-GUIDES
GAAS
TEMPERATURE
WAVELENGTH
LASERS
INP
Ultrafast carrier dynamics in undoped and p-doped InAs/GaAs quantum dots characterized by pump-probe reflection measurements
期刊论文
journal of applied physics, 2008, 卷号: 103, 期号: 8, 页码: art. no. 083121
Liu, HY
;
Meng, ZM
;
Dai, QF
;
Wu, LJ
;
Guo, Q
;
Hu, W
;
Liu, SH
;
Lan, S
;
Yang, T
收藏
  |  
浏览/下载:54/3
  |  
提交时间:2010/03/08
ENERGY RELAXATION
ELECTRON RELAXATION
CAPTURE
PHONON
INAS
GAAS
TEMPERATURE
DEPENDENCE
DENSITY
TIME
High repetition rate Q-switched microchip Nd:YVO4 laser with pulse duration as short as 1.1 ns
期刊论文
optik, 2008, 卷号: 119, 期号: 14, 页码: 657-660
Peng, JY
;
Tan, HM
;
Wang, YG
;
Ma, XY
;
Miao, JG
;
Wang, BS
;
Qian, LS
收藏
  |  
浏览/下载:58/2
  |  
提交时间:2010/03/08
Microchip laser
Q-switched
High repetition rate
Lt In0.25Ga0.75As
GaAs
Fabrication and excitation-power-density-dependent micro-photoluminescence of hexagonal nanopillars with a single InGaAs/GaAs quantum well
期刊论文
nanotechnology, 2008, 卷号: 19, 期号: 27, 页码: art. no. 275304
Yang, L
;
Motohisa, J
;
Tomioka, K
;
Takeda, J
;
Fukui, T
;
Geng, MM
;
Jia, LX
;
Zhang, L
;
Liu, YL
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  |  
浏览/下载:44/0
  |  
提交时间:2010/03/08
INTERNAL ELECTRIC-FIELDS
OPTICAL-PROPERTIES
EPITAXIAL-GROWTH
BUILDING-BLOCKS
(111)B SURFACES
NANOWIRES
INTENSITY
DEVICES
GAAS
Nonlinear optical response of nc-Si-SiO2 films studied with femtosecond four-wave mixing technique
期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 11, 页码: 2989-2992
Guo HQ (Guo Heng-Qun)
;
Wang QM (Wang Qi-Ming)
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2010/04/11
3RD-ORDER
TIME
GAAS
Passively mode-locked Nd : YVO4 laser using semiconductor saturable absorption mirrors of interface states relaxation region
期刊论文
optik, 2006, 卷号: 117, 期号: 10, 页码: 474-476
Wang YG (Wang YongGang)
;
Ma XY (Ma XiaoYu)
;
Liu Y (Liu Yang)
;
Sun LQ (Sun LiQun)
;
Tian Q (Tian Qian)
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2010/04/11
SESAM
mode lock
interface
ABSORBER
GAAS
Effect of GaAS(100) 2 degrees surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots
期刊论文
applied surface science, 2006, 卷号: 252, 期号: 23, 页码: 8126-8130
Liang S (Liang S.)
;
Zhu HL (Zhu H. L.)
;
Ye XL (Ye X. L.)
;
Wang W (Wang W.)
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2010/04/11
photoluminescence
quantum dots
indium arsenide
1.3 MU-M
CHEMICAL-VAPOR-DEPOSITION
PHASE-EPITAXY
GAAS
LUMINESCENCE
SUBSTRATE
ISLANDS
DENSITY
LASERS
LAYER
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