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CORC

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Effects of GaN Capping on the Structural and the Optical Properties of InN Nanostructures Grown by Using MOCVD 期刊论文
journal of the korean physical society, 2010, 卷号: 57, 期号: 1, 页码: 128-132
Sun YP (Sun Yuanping); Sun Y (Sun Yuanping); Cho YH (Cho Yong-Hoon); Wang H (Wang Hui); Wang LL (Wang Lili); Zhang SM (Zhang Shuming); Yang H (Yang Hui)
收藏  |  浏览/下载：513/2  |  提交时间：2010/08/17
A new phototransistor with uni-travelling-carrier and optically gradual coupling properties 期刊论文
opto-electronics review, 2009, 卷号: 17, 期号: 3, 页码: 242-246
Wang L; Zhao L; Pan J; Zhang W; Wang H; Zhu H; Wang W
收藏  |  浏览/下载：41/0  |  提交时间：2010/03/08
Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells 期刊论文
applied surface science, 2006, 卷号: 252, 期号: 8, 页码: 3043-3050
作者:  Zhang SM
收藏  |  浏览/下载：83/0  |  提交时间：2010/04/11
Spatial distribution of deep level defects in crack-free AlGaN grown on GaN with a high-temperature AlN interlayer 期刊论文
journal of applied physics, 2006, 卷号: 100, 期号: 12, 页码: art.no.123101
Sun, Q (Sun, Q.); Wang, H (Wang, H.); Jiang, DS (Jiang, D. S.); Jin, RQ (Jin, R. Q.); Huang, Y (Huang, Y.); Zhang, SM (Zhang, S. M.); Yang, H (Yang, H.); Jahn, U (Jahn, U.); Ploog, KH (Ploog, K. H.)
收藏  |  浏览/下载：31/0  |  提交时间：2010/03/29
Characteristics of oxide-free InGaAlAs layers grown by narrow stripe selective MOVPE 期刊论文
semiconductor science and technology, 2005, 卷号: 20, 期号: 10, 页码: 1083-1086
作者:  Pan JQ
收藏  |  浏览/下载：94/37  |  提交时间：2010/03/17
MOCVD growth of high quality crack-free GaN on Si(III) substrates 会议论文
6th chinese optoelectronics symposium, kowloon, peoples r china, sep 12-14, 2003
Zhang BS; Zhu JJ; Wang YT; Yang H
收藏  |  浏览/下载：17/3  |  提交时间：2010/10/29
New method for the growth of highly uniform quantum dots 期刊论文
microelectronic engineering, 1998, 卷号: 43-44, 期号: 0, 页码: 79-83
Pan D; Zeng YP; Kong MY
收藏  |  浏览/下载：43/0  |  提交时间：2010/08/12

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