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A practical route towards fabricating GaN nanowire arrays 期刊论文
crystengcomm, 2011, 卷号: 13, 期号: 19, 页码: 5929-5935
Liu, JQ; Huang, J; Gong, XJ; Wang, JF; Xu, K; Qiu, YX; Cai, DM; Zhou, TF; Ren, GQ; Yang, H
收藏  |  浏览/下载：26/0  |  提交时间：2012/02/06
Electronic band structure of a type-II 'W' quantum well calculated by an eight-band k center dot p model 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 3, 页码: article no.30507
Yu X; Gu YX; Wang Q; Wei X; Chen LH
收藏  |  浏览/下载：65/4  |  提交时间：2011/07/06
The optimization of large gap-midgap ratio photonic crystal with improved Bisection-Particle Swarm Optimization 期刊论文
optics communications, 2011, 卷号: 284, 期号: 1, 页码: 226-230
作者:  Jiang B
收藏  |  浏览/下载：49/3  |  提交时间：2011/07/06
Optical properties of InN rods on sapphire grown by metal-organic chemical vapor deposition 期刊论文
physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 138-141
作者:  Zhang SM
收藏  |  浏览/下载：58/1  |  提交时间：2011/07/05
Design of novel polarization beam splitter in two-dimensional photonic crystal 期刊论文
acta physica sinica, 2010, 卷号: 59, 期号: 8, 页码: 5547-5552
Guo H (Guo Hao); Wu P (Wu Ping); Yu TB (Yu Tian-Bao); Liao QH (Liao Qing-Hua); Liu NH (Liu Nian-Hua); Huang YZ (Huang Yong-Zhen)
收藏  |  浏览/下载：60/1  |  提交时间：2010/09/07
Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties 期刊论文
physica b-condensed matter, 2010, 卷号: 405, 期号: 22, 页码: 4668-4672
Wang H (Wang H.); Jiang DS (Jiang D. S.); Jahn U (Jahn U.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Qiu YX (Qiu Y. X.); Yang H (Yang H.)
收藏  |  浏览/下载：35/0  |  提交时间：2010/12/12
Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition 期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 14, 页码: art. no. 145410
作者:  Zhang SM;  Yang H;  Yang H;  Wang YT;  Zhu JJ
收藏  |  浏览/下载：72/0  |  提交时间：2010/03/08
Revised ab initio natural band offsets of all group IV, II-VI, and III-V semiconductors 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 21, 页码: art. no. 212109
作者:  
收藏  |  浏览/下载：112/0  |  提交时间：2010/03/08
The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD 期刊论文
semiconductor science and technology, 2009, 卷号: 24, 期号: 5, 页码: art. no. 055001
作者:  
收藏  |  浏览/下载：88/41  |  提交时间：2010/03/08
Suppression of indium droplet formation by adding CCl4 during metalorganic chemical vapor deposition growth of InN films 期刊论文
semiconductor science and technology, 2009, 卷号: 24, 期号: 7, 页码: art. no. 075004
作者:  
收藏  |  浏览/下载：47/1  |  提交时间：2010/03/08

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