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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Flattening of low temperature epitaxial Ge1-xSnx/Ge/Si(100) alloys via mass transport during post-growth annealing 期刊论文 applied surface science, 2011, 卷号: 257, 期号: 9, 页码: 4468-4471 Wang W; Su SJ; Zheng J; Zhang GZ; Xue CL; Zuo YH; Cheng BW; Wang QM 收藏  |  浏览/下载：98/7  |  提交时间：2011/07/05 Germanium tin alloys  Germanium buffer  Surface morphology evolution  Mass transport  SURFACE  GROWTH  EVOLUTION  DECAY   A 1Gb/s silicon photo-receiver in standard CMOS for 850-nm optical communication 会议论文 international workshop on electron devices and semiconductor technology, beijing, peoples r china, jun 03-04, 2007 Huang BJ (Huang Beiju); Zhang X (Zhang Xu); Liu HJ (Liu Haijun); Liu JB (Liu, Jinbin); Dai XG (Dai Xiaoguang); Zhang Y (Zhang Yu); Chen HD (Chen Hongda) 收藏  |  浏览/下载：123/24  |  提交时间：2010/03/29 complementary metal-oxide-semiconductor (CMOS)   Photoluminescence study of AlGaInP/GaInP quantum well intermixing induced by zinc impurity diffusion 期刊论文 journal of crystal growth, 2007, 卷号: 309, 期号: 2, 页码: 140-144 Lin, T; Zheng, K; Wang, CL; Ma, XY 收藏  |  浏览/下载：38/3  |  提交时间：2010/03/08 diffusion  metalorganic vapor phase epitaxy  semiconducting III-V materials  laser diodes   Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs MQWs by ultra-low pressure MOVPE 期刊论文 semiconductor science and technology, 2006, 卷号: 21, 期号: 7, 页码: 841-845 Feng W (Feng W.); Pan JQ (Pan J. Q.); Zhou F (Zhou F.); Yang H (Yang H.); Zhao LJ (Zhao L. J.); Zhu HL (Zhu H. L.); Wang W (Wang W.) 收藏  |  浏览/下载：17/0  |  提交时间：2010/04/11 VAPOR-PHASE EPITAXY  BURIED-HETEROSTRUCTURE LASERS  QUANTUM-WELL STRUCTURES  BANDGAP ENERGY CONTROL  LAYERS  INGAASP   AlGaInAs narrow stripe selective growth on substrates patterned with different mask designs 期刊论文 journal of physics d-applied physics, 2006, 卷号: 39, 期号: 11, 页码: 2330-2334 作者:  Pan JQ 收藏  |  浏览/下载：41/0  |  提交时间：2010/04/11 VAPOR-PHASE EPITAXY  BURIED-HETEROSTRUCTURE LASERS  BANDGAP ENERGY CONTROL  QUANTUM-WELL LASERS  PRESSURE MOVPE  AREA GROWTH  INGAALAS  LAYERS   Investigations on oxide-free InGaAlAs waveguides grown by narrow stripe selective MOVPE 会议论文 12th international conference on indium phosphide and related materials, princeton, nj, may 07-11, 2006 Feng, W (Feng, W.); Pan, JQ (Pan, J. Q.); Zhou, F (Zhou, F.); Zhao, LJ (Zhao, L. J.); Zhu, HL (Zhu, H. L.); Wang, W (Wang, W.) 收藏  |  浏览/下载：93/15  |  提交时间：2010/03/29 BURIED-HETEROSTRUCTURE LASERS  BANDGAP ENERGY CONTROL  VAPOR-PHASE EPITAXY  PRESSURE MOVPE  CONVERTER   X-ray-diffraction study of quasipseudomorphic ErSi1.7 layers formed by channeled ion-beam synthesis 期刊论文 journal of applied physics, 1996, 卷号: 80, 期号: 10, 页码: 5713-5717 Wu MF; Vantomme A; Pattyn H; Langouche G; Yang QQ; Wang QM 收藏  |  浏览/下载：21/0  |  提交时间：2010/11/17 EPITAXIAL ERBIUM SILICIDE  RARE-EARTH SILICIDES  DIFFUSION MARKER EXPERIMENTS  THIN-FILMS  111 SI  ELECTRICAL-PROPERTIES  ATOMIC-STRUCTURE  IMPLANTED SI  YTTRIUM  GROWTH