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Photoluminescence degradation in GaN induced by light enhanced surface oxidation 期刊论文
journal of applied physics, 2007, 卷号: 102, 期号: 7, 页码: art.no.076112
Liu WB (Liu Wenbao); Sun X (Sun Xian); Zhang S (Zhang Shuang); Chen J (Chen Jun); Wang H (Wang Hui); Wang XL (Wang Xiaolan); Zhao DG (Zhao Degang); Yang H (Yang Hui)
收藏  |  浏览/下载:45/0  |  提交时间:2010/03/29
Space-charge-limited currents in GaN Schottky diodes 期刊论文
solid-state electronics, 2005, 卷号: 49, 期号: 5, 页码: 847-852
作者:  Zhao DG
收藏  |  浏览/下载:27/0  |  提交时间:2010/03/17
GaN  
Electron migration in BaFCl:Eu2+ phosphors 期刊论文
journal of applied physics, 1997, 卷号: 81, 期号: 7, 页码: 3170-3174
Chen W; Song QQ; Su MZ
收藏  |  浏览/下载:18/0  |  提交时间:2010/11/17
CHARACTERIZATION OF HIGH FLUENCE NEUTRON-INDUCED DEFECT LEVELS IN HIGH-RESISTIVITY SILICON DETECTORS USING A LASER DEEP-LEVEL TRANSIENT SPECTROSCOPY (L-DLTS) 期刊论文
nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment, 1994, 卷号: 342, 期号: 1, 页码: 137-142
LI CJ; LI Z
收藏  |  浏览/下载:23/0  |  提交时间:2010/11/15


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