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CORC

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High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 5, 页码: article no.55013
Wu CM; Zhang BP; Shang JZ; Cai LE; Zhang JY; Yu JZ; Wang QM
收藏  |  浏览/下载：66/3  |  提交时间：2011/07/05
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801
Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Chen GF (Chen Gui-Feng); Zhang SM (Zhang Shu-Ming); Jiang DS (Jiang De-Sheng); Liu ZS (Liu Zong-Shun); Zhao DG (Zhao De-Gang); Wang H (Wang Hui); Wang YT (Wang Yu-Tian); Yang H (Yang Hui)
收藏  |  浏览/下载：128/4  |  提交时间：2010/04/13
Study of GaN epilayers growth on freestanding Si cantilevers 期刊论文
solid-state electronics, 2010, 卷号: 54, 期号: 1, 页码: 4-7
Chen J; Wang X; Wu AM; Zhang B; Wang X; Wu YX; Zhu JJ; Yang H
收藏  |  浏览/下载：73/0  |  提交时间：2010/04/04
Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si (111) 期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 3, 页码: art. no. 038103
Wang H (Wang Hui); Liang H (Liang Hu); Wang Y (Wang Yong); Ng KW (Ng Kar-Wei); Deng DM (Deng Dong-Mei); Lau KM (Lau Kei-May)
收藏  |  浏览/下载：96/3  |  提交时间：2010/04/22
High-temperature AlN interlayer for crack-free AlGaN growth on GaN 期刊论文
journal of applied physics, 2008, 卷号: 104, 期号: 4, 页码: art. no. 043516
Sun, Q; Wang, JT; Wang, H; Jin, RQ; Jiang, DS; Zhu, JJ; Zhao, DG; Yang, H; Zhou, SQ; Wu, MF; Smeets, D; Vantomme, A
收藏  |  浏览/下载：74/0  |  提交时间：2010/03/08
Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells 期刊论文
applied surface science, 2006, 卷号: 252, 期号: 8, 页码: 3043-3050
作者:  Zhang SM
收藏  |  浏览/下载：84/0  |  提交时间：2010/04/11
Spatial distribution of deep level defects in crack-free AlGaN grown on GaN with a high-temperature AlN interlayer 期刊论文
journal of applied physics, 2006, 卷号: 100, 期号: 12, 页码: art.no.123101
Sun, Q (Sun, Q.); Wang, H (Wang, H.); Jiang, DS (Jiang, D. S.); Jin, RQ (Jin, R. Q.); Huang, Y (Huang, Y.); Zhang, SM (Zhang, S. M.); Yang, H (Yang, H.); Jahn, U (Jahn, U.); Ploog, KH (Ploog, K. H.)
收藏  |  浏览/下载：31/0  |  提交时间：2010/03/29
Lateral phase separation in AlGaN grown on GaN with a high-temperature AIN interlayer 期刊论文
applied physics letters, 2005, 卷号: 87, 期号: 12, 页码: art.no.121914
作者:  Yang H;  Yang H;  Wang H;  Jiang DS;  Zhang SM
收藏  |  浏览/下载：108/19  |  提交时间：2010/03/17
Reduction of tensile stress in GaN grown on Si(111) by inserting a low-temperature AlN interlayer 期刊论文
journal of crystal growth, 2004, 卷号: 270, 期号: 3-4, 页码: 316-321
作者:  Zhao DG
收藏  |  浏览/下载：194/51  |  提交时间：2010/03/09
Growth of crack-free AlGaN film on thin AlN interlayer by MOCVD 期刊论文
journal of crystal growth, 2004, 卷号: 268, 期号: 1-2, 页码: 35-40
Jin RQ; Liu JP; Zhang JC; Yang H
收藏  |  浏览/下载：496/215  |  提交时间：2010/03/09

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