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Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure 期刊论文
journal of alloys and compounds, 2016, 卷号: 670, 页码: 258-261
Xiaoguang He; Degang Zhao; Wei Liu; Jing Yang; Xiaojing Li; Xiang Li
收藏  |  浏览/下载:12/0  |  提交时间:2017/03/10
Interaction between the intrinsic second- and third-order optical fields in an Al0.53Ga0.47N/GaN heterostructure 期刊论文
applied physics letters, 2008, 卷号: 92, 期号: 16, 页码: art. no. 161112
作者:  Chen P
收藏  |  浏览/下载:47/1  |  提交时间:2010/03/08
Hydrogen sensors based on Pt-AlGN/AIN/GaN Schottky diode - art. no. 68291R 会议论文
conference on advanced materials and devices for sensing and imaging iii, beijing, peoples r china, nov 12-14, 2007
Wang, XH; Wan, XL; Xiao, HL; Feng, C; Way, BZ; Yang, CB; Wang, JX; Wang, CM; Ran, JX; Hu, GX; Li, JM
收藏  |  浏览/下载:31/0  |  提交时间:2010/03/09


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