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科研机构
半导体研究所 [9]
内容类型
期刊论文 [9]
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2010 [2]
2007 [1]
2006 [2]
2005 [2]
2000 [1]
1999 [1]
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光电子学 [9]
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学科主题:光电子学
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Optical properties of InN rods on sapphire grown by metal-organic chemical vapor deposition
期刊论文
physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 138-141
作者:
Zhang SM
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  |  
浏览/下载:58/1
  |  
提交时间:2011/07/05
BAND-GAP
INDIUM NITRIDE
TRANSPORT
EMISSION
Silicon-Based Asymmetric Add-Drop Microring Resonators with Ultra-Large Through-Port Extinctions
期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 5, 页码: art. no. 054208
Xiao X (Xiao Xi)
;
Li YT (Li Yun-Tao)
;
Yu YD (Yu Yu-De)
;
Yu JZ (Yu Jin-Zhong)
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  |  
浏览/下载:32/0
  |  
提交时间:2010/05/24
FILTERS
BAND
Photoluminescence degradation in GaN induced by light enhanced surface oxidation
期刊论文
journal of applied physics, 2007, 卷号: 102, 期号: 7, 页码: art.no.076112
Liu WB (Liu Wenbao)
;
Sun X (Sun Xian)
;
Zhang S (Zhang Shuang)
;
Chen J (Chen Jun)
;
Wang H (Wang Hui)
;
Wang XL (Wang Xiaolan)
;
Zhao DG (Zhao Degang)
;
Yang H (Yang Hui)
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  |  
浏览/下载:45/0
  |  
提交时间:2010/03/29
GAAS-SURFACES
MQW electroabsorption modulator-integrated DFB laser modules for high-speed transmission
期刊论文
semiconductor science and technology, 2006, 卷号: 21, 期号: 6, 页码: 734-739
作者:
Pan JQ
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  |  
浏览/下载:58/0
  |  
提交时间:2010/04/11
VAPOR-PHASE EPITAXY
MONOLITHIC INTEGRATION
SELECTIVE GROWTH
LAYERS
DIODE
MOVPE
Comparison between double crystals X-ray diffraction micro-Raman measurement on composition determination of high Ge content Si1_xGex layer epitaxied on Si substrate
期刊论文
journal of materials science & technology, 2006, 卷号: 22, 期号: 5, 页码: 651-654
Zhao L (Zhao Lei)
;
Zuo YH (Zuo Yuhua)
;
Cheng BW (Cheng Buwen)
;
Yu JZ (Yu Jinzhong)
;
Wang QM (Wang Qiming)
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  |  
浏览/下载:38/0
  |  
提交时间:2010/04/11
Si1_xGex
Ge content
composition determination
double crystals X-ray diffraction (DCXRD)
micro-Raman measurement
BAND-GAP
HETEROSTRUCTURES
SUPERLATTICES
ALLOYS
RELAXATION
SCATTERING
THICKNESS
STRAIN
A 10-GHz bandwidth electroabsorption modulated laser by ultra-low-pressure selective area growth
期刊论文
chinese physics letters, 2005, 卷号: 22, 期号: 8, 页码: 2016-2019
Zhao, Q
;
Pan, JQ
;
Zhou, F
;
Wang, BJ
;
Wang, LF
;
Wang, W
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  |  
浏览/下载:34/14
  |  
提交时间:2010/03/17
MOVPE
Monolithic integration of an InGaAsP-InP strained DFB laser and an electroabsorption modulator by ultra-low-pressure selective-area-growth MOCVD
期刊论文
semiconductor science and technology, 2005, 卷号: 20, 期号: 6, 页码: 544-547
作者:
Pan JQ
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浏览/下载:53/32
  |  
提交时间:2010/03/17
VAPOR-PHASE EPITAXY
Design consideration and performance of high-power and high-brightness InGaAs-InGaAsP-AlGaAs quantum-well diode lasers (lambda=0.98 mu m)
期刊论文
ieee journal of selected topics in quantum electronics, 2000, 卷号: 6, 期号: 4, 页码: 577-584
Yang GW
;
Hwu RJ
;
Xu ZT
;
Ma XY
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  |  
浏览/下载:48/0
  |  
提交时间:2010/08/12
quantum-well lasers
semiconductor diodes
semiconductor epitaxial layers
semiconductor lasers
semiconductor materials
OPERATION
SINGLE
Radiative transition in delta-doped GaAs superlattices
期刊论文
journal of infrared and millimeter waves, 1999, 卷号: 18, 期号: 1, 页码: 89-92
作者:
Tan PH
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  |  
浏览/下载:41/0
  |  
提交时间:2010/08/12
delta-doping
superlattices
radiative transition
SI
BAND-GAP
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