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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：光电子学    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Single dipole mode photonic crystal laser on InGaAsP/InP QW waveguide slab - art. no. 698436 会议论文 6th international conference on thin film physics and applications, shanghai, peoples r china, sep 25-28, 2007 Zheng WH; Xing MX; Ren G; Du XY; Wang K; Chen LH 收藏  |  浏览/下载：31/0  |  提交时间：2010/03/09 photonic crystal   High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates for solid-state lighting - art. no. 684103 会议论文 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Yan, FW; Gao, HY; Zhang, Y; Li, JM; Zeng, YP; Wang, GH; Yang, FH 收藏  |  浏览/下载：134/0  |  提交时间：2010/03/09 GaN  MOCVD  LED  nano-pattern  SEM  HRXRD  PL   On the performance analysis and design of a novel shared-layer integrated devices using RCE-p-i-n-PD/SHBT - art. no. 67820J 会议论文 conference on optoelectronic materials and devices ii, wuhan, peoples r china, nov 02-05, 2007 Shou-Li Z; De-Ping X; Ya-Li I; Hai-Lin C; Yin-Zhe C; Ang M; Ji-He L; Jun-Hua G 收藏  |  浏览/下载：45/0  |  提交时间：2010/03/09 RCE- p-i-n-PD   A model of dislocations at the interface of the bonded wafers 会议论文 conference on optical interconnects for telecommunication and data communications, beijing, peoples r china, nov 08-10, 2000 作者:  Han WH;  Wang LC 收藏  |  浏览/下载：16/0  |  提交时间：2010/10/29 wafer bonding  heteroepitaxy  lattice mismatch  edge-like dislocations  thermal stress  60 degrees dislocation lines  GAAS   Dynamics of formation of defects in annealed InP 会议论文 conference on integrated optoelectronics ii, beijing, peoples r china, sep 18-19, 1998 Han YJ; Liu XL; Jiao JH; Lin LY 收藏  |  浏览/下载：12/0  |  提交时间：2010/10/29 defects formation  hydrogen related defects  semi-insulating  InP   A study on GaP/Si heterostructures grown by GS-MBE 会议论文 conference on integrated optoelectronics ii, beijing, peoples r china, sep 18-19, 1998 Yu JZ; Chen BW; Yu Z; Wang QM 收藏  |  浏览/下载：17/0  |  提交时间：2010/10/29 GaP/Si heterostructure  GS-MBE  lattice match  X-ray double crystal diffraction  photoluminescence (PL)   Formation mechanism of defects in annealed InP 会议论文 spie conference on optoelectronic materials and devices, taipei, taiwan, jul 09-11, 1998 Han YJ; Liu XL; Jiao JH; Lin LY 收藏  |  浏览/下载：7/0  |  提交时间：2010/10/29 defects formation  hydrogen related defects  semi-insulating  InP