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浏览/检索结果: 共3条，第1-3条 帮助 限定条件 发表日期：2021     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Influence of enhanced low dose rate sensitivity on single-event transient degradation in the LM158 bipolar operational amplifier 期刊论文 AIP ADVANCES, 2021, 卷号: 11, 期号: 5, 页码: 1-6 作者:  Xiang, CAF (Xiang, Chuanfeng) 1 , 2;  Yao, S (Yao, Shuai) 1 , 3;  Lu, W (Lu, Wu) 1 , 2;  Li, XL (Li, Xiaolong) 1;  Yu, X (Yu, Xin) 1 收藏  |  浏览/下载：34/0  |  提交时间：2021/08/06 Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs 期刊论文 JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 9, 页码: 1423-1429 作者:  Feng, HN (Feng, Haonan) [1] , [2] , [3];  Yang, S (Yang, Sheng) [1] , [2] , [3];  Liang, XW (Liang, Xiaowen) [1] , [2] , [3];  Zhang, D (Zhang, Dan) [1] , [2] , [3];  Pu, XJ (Pu, Xiaojuan) [1] , [2] , [3] 收藏  |  浏览/下载：41/0  |  提交时间：2022/03/24 SiC Power MOSFETs  Switching Characteristics  Total Ionizing Dose (TID) Effect  Static Characteristic  Parasitic Capacitance   TID Response and Radiation-Enhanced Hot-Carrier Degradation in 65-nm nMOSFETs: Concerns on the Layout-Dependent Effects 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 8, 页码: 1565-1570 作者:  Ren, ZX (Ren, Zhexuan);  1An, X (An, Xia) 1;  Li, GS (Li, Gensong) 1;  Liu, JY (Liu, Jingyi) 1;  Xun, MZ (Xun, Mingzhu) 2 收藏  |  浏览/下载：35/0  |  提交时间：2021/09/22 65 nmhot-carrier injection (HCI)layout-dependent effect (LDE)nMOSstressthreshold voltagetotal ionizing dose (TID)