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浏览/检索结果: 共9条，第1-9条 帮助 限定条件 发表日期：2020     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Field-Free 3T2SOT MRAM for Non-Volatile Cache Memories 期刊论文 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2020, 卷号: 67, 期号: 12, 页码: 4660-4669 作者:  Wu, Bi;  Wang, Chao;  Wang, Zhaohao;  Wang, Ying;  Zhang, Deming 收藏  |  浏览/下载：41/0  |  提交时间：2021/12/01 Random access memory  Magnetic tunneling  Switches  Reliability  Tunneling magnetoresistance  Metals  Transistors  SOT-MRAM  low power  high speed  high reliability   Enabling Secure NVM-Based in-Memory Neural Network Computing by Sparse Fast Gradient Encryption 期刊论文 IEEE TRANSACTIONS ON COMPUTERS, 2020, 卷号: 69, 期号: 11, 页码: 1596-1610 作者:  Cai, Yi;  Chen, Xiaoming;  Tian, Lu;  Wang, Yu;  Yang, Huazhong 收藏  |  浏览/下载：32/0  |  提交时间：2020/12/10 Artificial neural networks  Nonvolatile memory  Encryption  Computational modeling  Hardware  Non-volatile memory (NVM)  compute-in-memory (CIM)  neural network  security  encryption   Architectural Support for NVRAM Persistence in GPUs 期刊论文 IEEE TRANSACTIONS ON PARALLEL AND DISTRIBUTED SYSTEMS, 2020, 卷号: 31, 期号: 5, 页码: 1107-1120 作者:  Chen, Sui;  Liu, Lei;  Zhang, Weihua;  Peng, Lu 收藏  |  浏览/下载：13/0  |  提交时间：2020/12/10 NVRAM  persistence  GPUs  helper warps   Charged domain wall modulation of resistive switching with large ON/OFF ratios in high density BiFeO3 nano-islands 期刊论文 ACTA MATERIALIA, 2020, 卷号: 187, 页码: 12-18 作者:  Han, M. J.;  Tang, Y. L.;  Wang, Y. J.;  Zhu, Y. L.;  Ma, J. Y. 收藏  |  浏览/下载：20/0  |  提交时间：2021/02/02 Resistive switching behavior  Charged domain walls  Conductive filament mode  Transmission electron microscopy  Piezoresponse force microscopy   Charged domain wall modulation of resistive switching with large ON/OFF ratios in high density BiFeO3 nano-islands 期刊论文 ACTA MATERIALIA, 2020, 卷号: 187, 页码: 12-18 作者:  Han, M. J.;  Tang, Y. L.;  Wang, Y. J.;  Zhu, Y. L.;  Ma, J. Y. 收藏  |  浏览/下载：11/0  |  提交时间：2021/02/02 Resistive switching behavior  Charged domain walls  Conductive filament mode  Transmission electron microscopy  Piezoresponse force microscopy   Charged domain wall modulation of resistive switching with large ON/OFF ratios in high density BiFeO3 nano-islands 期刊论文 Acta Materialia, 2020, 卷号: 187, 页码: 12-18 作者:  Han, M.J.;  Tang, Y.L.;  Wang, Y.J.;  Zhu, Y.L.;  Ma, J.Y. 收藏  |  浏览/下载：5/0  |  提交时间：2020/11/14 Bismuth compounds  Digital storage  Heterojunctions  High resolution transmission electron microscopy  Iron compounds  Scanning probe microscopy  Switching  Transmission electron microscopy  Tunnel junctions  Charged domain wall  Conductive filaments  Macroscopic and microscopic  Nonvolatile memory devices  Piezoresponse force microscopy  Resistance switching behaviors  Resistive switching behaviors  Technological applications   Sub-nanosecond memristor based on ferroelectric tunnel junction 期刊论文 NATURE COMMUNICATIONS, 2020, 卷号: 11 作者:  Ma, Chao;  Luo, Zhen;  Huang, Weichuan;  Zhao, Letian;  Chen, Qiaoling 收藏  |  浏览/下载：29/0  |  提交时间：2020/11/26 Bulkyflip: A NAND-SPIN-Based Last-Level Cache With Bandwidth-Oriented Write Management Policy 期刊论文 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2020, 卷号: 67, 期号: 1, 页码: 108-120 作者:  Wu, Bi;  Dai, Pengcheng;  Wang, Zhaohao;  Wang, Chao;  Wang, Ying 收藏  |  浏览/下载：16/0  |  提交时间：2020/12/10 NAND-SPIN  spin orbit torque (SOT) MRAM  last level cache  write throughput  high performance   Impact of electrical stress on total ionizing dose effects on graphene nano-disc non-volatile memory devices 期刊论文 MICROELECTRONICS RELIABILITY, 2020, 卷号: 114, 期号: 11, 页码: 1-5 作者:  Xi, K (Xi, K.)[ 1 ];  Bi, JS (Bi, J. S.)[ 1,2 ];  Xu, YN (Xu, Y. N.)[ 1 ];  Li, YD (Li, Y. D.)[ 3 ];  Zhang, ZG (Zhang, Z. G.)[ 4 ] 收藏  |  浏览/下载：19/0  |  提交时间：2021/01/05