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| Electrical properties of Si and Be doped InSb and InAlSb/InSb superlattice applied to improve the doping efficiency 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2020, 卷号: 535, 页码: 125377
作者: Haiyun Dong; Yang Zhang; Lijie Cui; Min Guan; Yiyang Li; Zhanping Zhu; Baoqiang Wang; Yiping Zeng
  收藏 | 浏览/下载：9/0 | 提交时间：2021/11/01 |
| HCl-H2SO4-H2O solution etching behavior of InAs (1 0 0) surface 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2020, 卷号: 547, 页码: 125800
作者: Guiying Shen; Youwen Zhao; Jing Sun; Jingming Liu; Hui Xie; Jun Yang; Zhiyuan Dong
收藏 | 浏览/下载：6/0 | 提交时间：2021/05/24 |
| Catalyst-Assisted Large-Area Growth of Single-Crystal β-Ga2O3 Nanowires on Sapphire Substrates by Metal–Organic Chemical Vapor Deposition 期刊论文
NANOMATERIALS, 2020, 卷号: 10, 期号: 6, 页码: 1031
作者: Chunyang Jia; Dae-Woo Jeon ; Jianlong Xu ; Xiaoyan Yi ; Ji-Hyeon Park ; Yiyun Zhang
收藏 | 浏览/下载：12/0 | 提交时间：2021/06/11 |
| Investigation of the distribution of deep levels in 4H-SiC epitaxial wafer by DLTS with the method of decussate sampling 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2020, 卷号: 531, 页码: 125352
作者: Yawei He ; Guoguo Yan ; Zhanwei Shen; Wanshun Zhao ; Lei Wang ; Xingfang Liu ; Guosheng Sun; Feng Zhang ; Yiping Zeng
收藏 | 浏览/下载：16/0 | 提交时间：2021/12/20 |
| Defect appearance on 4H-SiC homoepitaxial layers via molten KOH etching 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2020, 卷号: 531, 页码: 125359
作者: X.F. Liu; G.G. Yan; L. Sang; Y.X. Niu; Y.W. He; Z.W. Shen; Z.X. Wen; J. Chen; W.S. Zhao; L. Wang; M. Guan; F. Zhang; G.S. Sun; Y.P. Zeng
收藏 | 浏览/下载：11/0 | 提交时间：2021/11/26 |
| Effect of C/Si ratio on growth of 4H-SiC epitaxial layers on on-axis and 4° off-axis substrates 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2020, 卷号: 531, 页码: 125362
作者: G.G. Yan; Y.W. He; Z.W. Shen; Y.X. Cui; J.T. Li; W.S. Zhao; L. Wang; X.F. Liu; F. Zhang; G.S. Sun; Y.P. Zeng
收藏 | 浏览/下载：9/0 | 提交时间：2021/11/26 |
| Analysis of growth rate and crystal quality of AlN epilayers by flow-modulated metal organic chemical vapor deposition 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2020, 卷号: 137, 页码: 106336
作者: Fangzheng Li; Lianshan Wang ; Weizhen Yao ; Yulin Meng ; Shaoyan Yang; Zhanguo Wang
收藏 | 浏览/下载：20/0 | 提交时间：2021/12/16 |
| VGF growth of high quality InAs single crystals with low dislocation density 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2020, 卷号: 531, 页码: 125350
作者: Jun Yang; Wei Lu; Manlong Duan; Hui Xie; Guiying Shen; Jingmin Liu; Zhiyuan Dong; Youwen Zhao
收藏 | 浏览/下载：8/0 | 提交时间：2021/12/16 |
| MBE growth of high quality InAsSb thin films on GaAs substrates with GaSb as buffer layers 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2020, 卷号: 542, 页码: 125688
作者: Yong Li; Xiaoming Li; Ruiting Hao; Jie Guo; Yunpeng Wang; Abuduwayiti Aierken; Yu Zhuang; Faran Chang; Suning Cui; Kang Gu; Guoshuai Wei; Xiaole Ma; Guowei Wang; Yingqiang Xu; Zhichuan Niu
收藏 | 浏览/下载：23/0 | 提交时间：2021/06/28 |
