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AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity 期刊论文
ADVANCED FUNCTIONAL MATERIALS, 2019, 卷号: 29, 期号: 12, 页码: 9
作者:  Wu, Feng;  Xia, Hui;  Sun, Haiding;  Zhang, Junwei
收藏  |  浏览/下载:22/0  |  提交时间:2021/02/02
AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity 期刊论文
ADVANCED FUNCTIONAL MATERIALS, 2019, 卷号: 29, 期号: 12, 页码: 9
作者:  Wu, Feng;  Xia, Hui;  Sun, Haiding;  Zhang, Junwei;  Gong, Fan
收藏  |  浏览/下载:15/0  |  提交时间:2021/02/02
Thermoelectric performance of monolayer InSe improved by convergence of multivalley bands 期刊论文
JOURNAL OF APPLIED PHYSICS, 2019, 卷号: 125, 期号: 8, 页码: 8
作者:  Hung, Nguyen T.;  Nugraha, Ahmad R. T.;  Yang, Teng;  Zhang, Zhidong;  Saito, Riichiro
收藏  |  浏览/下载:11/0  |  提交时间:2021/02/02
Strong Electron-Phonon Coupling and its Influence on the Transport and Optical Properties of Hole-Doped Single-Layer InSe 期刊论文
PHYSICAL REVIEW LETTERS, 2019, 卷号: 123, 期号: 17
作者:  Lugovskoi, A., V;  Katsnelson, M., I;  Rudenko, A. N.
收藏  |  浏览/下载:10/0  |  提交时间:2019/12/05
High selectivity n-type InSe monolayer toward decomposition products of sulfur hexafluoride: A density functional theory study 期刊论文
APPLIED SURFACE SCIENCE, 2019, 卷号: 479
作者:  Chen, Dachang;  Zhang, Xiaoxing;  Cui, Hao;  Tang, Ju;  Pi, Shoumiao
收藏  |  浏览/下载:7/0  |  提交时间:2019/12/05
High selectivity n-type InSe monolayer toward decomposition products of sulfur hexafluoride: A density functional theory study 期刊论文
Applied Surface Science, 2019, 卷号: 479
作者:  Chen, Dachang;  Zhang, Xiaoxing;  Cui, Hao;  Tang, Ju;  Pi, Shoumiao
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/05
InSe Nanosheets for Efficient NIR-II-Responsive Drug Release 期刊论文
ACS Applied Materials & Interfaces, 2019
作者:  Chi Huang;  Zhengbo Sun;  Haodong Cui;  Ting Pan;  Shengyong Geng
收藏  |  浏览/下载:4/0  |  提交时间:2019/12/13
Theoretical study on the intrinsic properties of InSe/MoS as a photocatalyst driven by near-infrared, visible and ultraviolet light 期刊论文
Catalysis Science & Technology, 2019, 卷号: Vol.9 No.17, 页码: 4659-4667
作者:  Jin-Rong Zhang;  Xi-Zi Deng;  Bin Gao;  Lang Chen;  Chak-Tong Au
收藏  |  浏览/下载:4/0  |  提交时间:2019/12/13
Schottky-barrier thin-film transistors based on HfO2-capped InSe 期刊论文
Applied Physics Letters, 2019, 卷号: 115, 期号: 3
作者:  Wang, Yiming;  Zhang, Jiawei;  Liang, Guangda;  Shi, Yanpeng;  Zhang, Yifei
收藏  |  浏览/下载:4/0  |  提交时间:2019/12/11
Two Dimensional β-InSe with Layer-Dependent Properties: Band Alignment, Work Function and Optical Properties. 期刊论文
Nanomaterials, 2019, 卷号: Vol.9 No.1, 页码: 82
作者:  Sang, David K.;  Wang, Huide;  Qiu, Meng;  Cao, Rui;  Guo, Zhinan
收藏  |  浏览/下载:13/0  |  提交时间:2019/12/17


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