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浏览/检索结果: 共3条，第1-3条 帮助 限定条件 发表日期：2019    专题：长春光学精密机械与物理研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Photoelectric Properties of N Doped MgZnO Thin Films 期刊论文 Faguang Xuebao/Chinese Journal of Luminescence, 2019, 卷号: 40, 期号: 8, 页码: 956-960 作者:  P.-C.Zhao;  Z.-Z.Zhang;  B.Yao;  B.-H.Li;  X.-L.Li 收藏  |  浏览/下载：3/0  |  提交时间：2020/08/24 Thin films,Carrier mobility,II-VI semiconductors,Light emission,Magnesium,Molecular beam epitaxy,Molecular beams,Nitrogen,Photoelectricity,Sapphire,Semiconductor alloys,Semiconductor doping,Zinc oxide   Point defects: key issues for -oxides wide-bandgap semiconductors development 期刊论文 Wuli Xuebao/Acta Physica Sinica, 2019, 卷号: 68, 期号: 16 作者:  X.-H.Xie;  B.-H.Li;  Z.-Z.Zhang;  L.Liu;  K.-W.Liu 收藏  |  浏览/下载：4/0  |  提交时间：2020/08/24 Wide band gap semiconductors,Arc lamps,Beryllia,Binding energy,Doping (additives),Electroluminescence,Energy gap,II-VI semiconductors,Ionization of gases,Ionization potential,Magnesia,Magnetic semiconductors,Point defects,Semiconductor doping,Semiconductor lasers,Semiconductor quantum wells,Ultraviolet lasers,Zinc oxide   Semimetal or Semiconductor: The Nature of High Intrinsic Electrical Conductivity in TiS2 期刊论文 Journal of Physical Chemistry Letters, 2019, 卷号: 10, 期号: 22, 页码: 6996-7001 作者:  H.Wang;  Z.Z.Qiu;  W.Y.Xia;  C.Ming;  Y.Y.Han 收藏  |  浏览/下载：2/0  |  提交时间：2020/08/24 angle-resolved photoemission,electronic-structure,optical-properties,lithium batteries,quasi-particle,band-structure,intercalation,compounds,titanium disulfide,pseudopotentials,refinement,Chemistry,Science & Technology - Other Topics,Materials Science,Physics