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Display device 专利
专利号: US9923124, 申请日期: 2018-03-20, 公开日期: 2018-03-20
作者:  MAZED, MOHAMMAD A;  MAZED, SAYEEDA
收藏  |  浏览/下载:15/0  |  提交时间:2019/12/24
Improved performance of 1.3-mu m InAs-GaAs quantum dot lasers by direct Si doping 期刊论文
APPLIED PHYSICS LETTERS, 2018, 卷号: 113, 页码: 011105
作者:  Zun-Ren Lv;   Zhong-Kai Zhang;   Xiao-Guang Yang;   Tao Yang
收藏  |  浏览/下载:50/0  |  提交时间:2019/11/12
Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers 期刊论文
Nanoscale Research Letters, 2018, 卷号: 13, 页码: 59
作者:  Xiang-Bin Su ;   Ying Ding ;   Ben Ma ;   Ke-Lu Zhang ;   Ze-Sheng Chen ;   Jing-Lun Li ;   Xiao-Ran Cui ;  Ying-Qiang Xu ;   Hai-Qiao Ni ;   Zhi-Chuan Niu
收藏  |  浏览/下载:36/0  |  提交时间:2019/11/18
InAs/GaAs Quantum Dot Dual-Mode Distributed Feedback Laser Towards Large Tuning Range Continuous-Wave Terahertz Application 期刊论文
NANOSCALE RESEARCH LETTERS, 2018, 卷号: 13, 页码: 267
作者:  Li, Qi-zhu[1];  Huang, Yuan-qing[2];  Ning, Ji-qiang[3];  Jiang, Cheng[4];  Wang, Xu[5]
收藏  |  浏览/下载:35/0  |  提交时间:2019/04/22
Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-mu m Quantum Dot Lasers 期刊论文
NANOSCALE RESEARCH LETTERS, 2018, 卷号: 13
作者:  Su, Xiang-Bin;  Ding, Ying;  Ma, Ben;  Zhang, Ke-Lu;  Chen, Ze-Sheng
收藏  |  浏览/下载:10/0  |  提交时间:2019/12/30
Investigation of regime switching from mode locking to Q-switching in a 2 um InGaSb GaAsSb quantum well laser 期刊论文
Optics Express, 2018, 卷号: 26, 期号: 7, 页码: 8289-8295
作者:  Li, X.;  Wang, H.;  Qiao, Z. L.;  Guo, X.;  Wang, W. J.
收藏  |  浏览/下载:0/0  |  提交时间:2019/09/17
Localized Surface Plasmon Enhanced All-Inorganic Perovskite Quantum Dot Light-Emitting Diodes Based on Coaxial Core/Shell Heterojunction Architecture 期刊论文
Advanced Functional Materials, 2018, 卷号: 28, 期号: 20, 页码: 11
作者:  Shi, Z. F.;  Li, Y.;  Li, S.;  Li, X. J.;  Wu, D.
收藏  |  浏览/下载:7/0  |  提交时间:2019/09/17


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