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浏览/检索结果: 共9条，第1-9条 帮助 限定条件 发表日期：2017     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Manipulating III-V Nanowire Transistor Performance via Surface Decoration of Metal-Oxide Nanoparticles 期刊论文 ADVANCED MATERIALS INTERFACES, 2017, 卷号: 4, 期号: 12 作者:  Wang, Fengyun;  Yip, SenPo;  Dong, Guofa;  Xiu, Fei;  Song, Longfei 收藏  |  浏览/下载：23/0  |  提交时间：2017/08/14 Enhancement Modes  Iii-v Nanowires  Metal-oxide Nanoparticles  Surface Decoration  Threshold Voltage   Complementary Metal Oxide Semiconductor-Compatible, High-Mobility, < 111 >-Oriented GaSb Nanowires Enabled by Vapor-Solid-Solid Chemical Vapor Deposition 期刊论文 ACS NANO, 2017, 卷号: 11, 期号: 4, 页码: 4237-4246 作者:  Yang, Zai-xing;  Liu, Lizhe;  Yip, SenPo;  Li, Dapan;  Shen, Lifan 收藏  |  浏览/下载：36/0  |  提交时间：2017/09/06 Gasb Nanowires  Growth Orientation  High Mobility  Vapor-solid-solid  Interface Plane Orientation  In-plane Lattice Mismatch   Coherent Transport in a Linear Triple Quantum Dot Made from a Pure-Phase InAs Nanowire 期刊论文 NANO LETTERS, 2017 Wang, Ji-Yin; Huang, Shaoyun; Huang, Guang-Yao; Pan, Dong; Zhao, Jianhua; Xu, H. Q. 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03 Triple quantum dot  InAs nanowire  cotunneling  coherent transport  SINGLE-ELECTRON SPIN  COMPUTATION  EXCHANGE  GIANT   Effect of nanohole size on selective area growth of InAs nanowire arrays on Si substrates 期刊论文 JOURNAL OF CRYSTAL GROWTH, 2017 Wang, Xiaoye; Yang, Wenyuan; Wang, Baojun; Ji, Xianghai; Xu, Shengyong; Wang, Wei; Chen, Qing; Yang, Tao 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 Nanowires  Surfaces  Metalorganic chemical vapor deposition  Selective-area growth  Nanomaterials  InAs  III-V NANOWIRES  HIGHLY UNIFORM  TRANSISTORS  HETEROEPITAXY  DIRECTION  SILICON  ATOMS  GAAS   Extracting band structure characteristics of GaSb/InAs core-shell nanowires from thermoelectric properties 期刊论文 PHYSICAL REVIEW B, 2017 Vinas, Florinda; Xu, H. Q.; Leijnse, Martin 收藏  |  浏览/下载：8/0  |  提交时间：2017/12/03 INAS NANOWIRES  GASB  HETEROSTRUCTURES  CONDUCTANCE  INAS/GASB  MODEL  FIELD  GAAS   Switching from Negative to Positive Photoconductivity toward Intrinsic Photoelectric Response in InAs Nanowire 期刊论文 ACS APPLIED MATERIALS &amp; INTERFACES, 2017 Han, Yuxiang; Fu, Mengqi; Tang, Zhiqiang; Zheng, Xiao; Ji, Xianghai; Wang, Xiaoye; Lin, Weijian; Yang, Tao; Chen, Qing 收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03 InAs nanowire  PPC  NPC  carrier scattering intrinsic photoelectric response  ELECTRONIC-PROPERTIES  ROOM-TEMPERATURE  PHOTODETECTORS  TRANSPORT   Coherent Transport in a Linear Triple Quantum Dot Made from a Pure-Phase InAs Nanowire 期刊论文 Nano Lett., 2017, 卷号: 17, 页码: 4158−4164 作者:  Ji-Yin Wang;  Shaoyun Huang;  Guang-Yao Huang;  Dong Pan;  Jianhua Zhao 收藏  |  浏览/下载：35/0  |  提交时间：2018/07/02 Effect of nanohole size on selective area growth of InAs nanowire arrays on Si substrates 期刊论文 Journal of Crystal Growth, 2017, 卷号: 460, 页码: 1-4 作者:  Xiaoye Wang;  Wenyuan Yang;  Baojun Wang;  Xianghai Ji;  Shengyong Xu 收藏  |  浏览/下载：23/0  |  提交时间：2018/05/30 Switching from Negative to Positive Photoconductivity toward Intrinsic Photoelectric Response in InAs Nanowire 期刊论文 ACS Applied Materials & Interfaces, 2017, 卷号: 9, 页码: 2867−2874 作者:  Yuxiang Han;  Mengqi Fu;  Zhiqiang Tang;  Xiao Zheng;  Xianghai Ji 收藏  |  浏览/下载：24/0  |  提交时间：2018/05/23